dc-bias stress of non-stochiometric amorphous silicon nitride thin film diodes

1996 ◽  
Vol 79 (2) ◽  
pp. 842 ◽  
Author(s):  
K. J. B. M. Nieuwesteeg ◽  
A. A. van der Put ◽  
M. T. Johnson ◽  
C. G. C. de Kort
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Amorphous Silicon Nitride ◽  
Bias Stress ◽  
Dc Bias

Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures

1991 ◽  
Vol 219 ◽  
Author(s):  
J. Kanicki ◽  
C. Godet ◽  
A. V. Gelatos
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Localized States ◽  
Negative Bias ◽  
Amorphous Silicon Nitride ◽  
Bias Stress ◽  
Silicon Structures ◽  
Hydrogenated Amorphous

ABSTRACTThe effects of positive and negative bias stress on hydrogenated amorphous silicon nitride / crystalline silicon and hydrogenated amorphous silicon nitride / hydrogenated amorphous silicon (a-Si:H) structures are investigated as a function of stress time, stress temperature and stress bias. It is shown that in both structures bias stress induces a parallel shift of the C-V (capacitance-voltage) characteristics. For a given stress bias the direction of the C-V shift depends on the sign of the applied stress voltage, while the magnitude of the C-V shift depends on stress time and temperature. In addition, it is shown that positive bias stress slightly increases the number of localized states in the a-Si:H mobility gap, but negative bias stress does not. These results lead us to conclude that the C-V shift is not induced by dangling bond defects in a-Si:H but rather by carrier trapping in the insulator.

High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Thin-Film Transistor Structures

1996 ◽  
Vol 424 ◽  
Author(s):  
Tong Li ◽  
Chun-Ying Chen ◽  
Charles T. Malone ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Rate ◽  
Electrical Performance ◽  
Silicon Thin Film ◽  
Amorphous Silicon Nitride ◽  
Hydrogenated Amorphous ◽  
Low Rate

AbstractHydrogenated amorphous silicon nitride thin films, prepared in a large area plasma-enhanced chemical vapor (PECVD) deposition system utilizing high-rate deposition technique, have been characterized by various techniques. Experimental data obtained from this study are presented and compared to low-rate deposited PECVD films. Special attention has been devoted during this study to the difference between high- and low-rate deposited samples. The amorphous silicon (a-Si:H) thin-film transistors (TFTs) based on high-rate PECVD materials have been fabricated and characterized. The evaluation of a-Si:H TFTs indicates a good electrical performance which is comparable to its low-rate PECVD materials counterparts.

High stability amorphous-silicon–nitride thin-film diode ring switch

1998 ◽  
Vol 72 (1) ◽  
pp. 91-93 ◽  
Author(s):  
M. T. Johnson ◽  
G. Oversluizen ◽  
A. A. van der Put ◽  
W. H. M. Lodders
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
High Stability ◽  
Amorphous Silicon Nitride
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