Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures

2011 ◽  
Vol 110 (2) ◽  
pp. 023705 ◽  
Author(s):  
Guipeng Liu ◽  
Ju Wu ◽  
Yanwu Lu ◽  
Zhiwei Li ◽  
Yafeng Song ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Spacer Layer Thickness ◽  
Spacer Layer ◽  
Dimensional Electron Gas

The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures

2006 ◽  
Vol 40 (12) ◽  
pp. 1445-1449 ◽  
Author(s):  
G. B. Galiev ◽  
I. S. Vasil’evskiĭ ◽  
E. A. Klimov ◽  
V. G. Mokerov ◽  
A. A. Cherechukin
Keyword(s):  
Growth Temperature ◽  
Electron Gas ◽  
Layer Growth ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Spacer Layer ◽  
Dimensional Electron Gas

Two-dimensional electron gas at the AlGaN/GaN interface: Layer thickness dependence

2020 ◽  
Vol 127 (11) ◽  
pp. 115703
Author(s):  
Vladimir N. Popok ◽  
Piotr A. Caban ◽  
Pawel Piotr Michalowski ◽  
Ryan Thorpe ◽  
Leonard C. Feldman ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Electron Gas ◽  
Interface Layer ◽  
Thickness Dependence ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

scholarly journals MAGNETIC INDUCTION DEPENDENCE OF THE DISPERSION OF MAGNETOPLASMON IN A TWO-DIMENSIONAL ELECTRON GAS WITH FINITE LAYER THICKNESS

2014 ◽  
Vol 28 (06) ◽  
pp. 1450044 ◽  
Author(s):  
T. UCHIDA ◽  
N. HIRAIWA ◽  
K. YAMADA ◽  
M. FUJITA ◽  
T. TOYODA
Keyword(s):  
Layer Thickness ◽  
Magnetic Induction ◽  
Electron Gas ◽  
Two Dimensional ◽  
Layer Plane ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Finite Layer ◽  
Dimensional Electron Gas ◽  
Static Uniform Magnetic Field

Magnetic induction dependence of the dispersion of longitudinal magnetoplasmon in a two-dimensional electron gas with finite layer thickness under a static uniform magnetic field normal to the layer plane is calculated using the self-consistent linear response approximation. Two longitudinal magnetoplasmon modes are obtained. The calculated dispersion agrees with the experiment by Batke et al. [Phys. Rev. B34, 6951 (1986)].

scholarly journals Подвижность двумерного электронного газа в DA-pHEMT гетроструктурах с различной шириной профиля delta-n-слоев

2018 ◽  
Vol 52 (1) ◽  
pp. 48
Author(s):  
Д.Ю. Протасов ◽  
А.К. Бакаров ◽  
А.И. Торопов ◽  
Б.Я. Бер ◽  
Д.Ю. Казанцев ◽  
...  
Keyword(s):  
Electron Gas ◽  
Growth Conditions ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Distribution Profile ◽  
Two Dimensional Electron Gas ◽  
Spacer Layer ◽  
Donor Acceptor ◽  
Dimensional Electron Gas ◽  
Selection Of

AbstractThe effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of the two-dimensional electron gas is studied. The parameters of the δ-layer profiles are determined using the normal approximation of the spatial distributions of silicon atoms, measured by secondary-ion mass spectroscopy. It is shown that the standard deviation σ of the δ-layer profile can be reduced from 3.4 to 2.5 nm by the proper selection of growth conditions. Measurements of the magnetic-field dependences of the Hall effect and conductivity show that such a decrease in σ allowed an increase in the mobility of the two-dimensional electron gas in heterostructures by 4000 cm^2/(V s) at 77 K and 600 cm^2/(V s) at 300 K. The mobility calculation taking into account filling of the first two size-quantization subbands shows that an increase in the mobility is well explained by a reduction in the Coulomb scattering at ionized donors due to an increase in the effective thickness of the spacer layer with decreasing σ of the δ-layer profile.

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