Layer sequence and silicide formation of a Co/(refractory metal) bilayer on (100)Si substrate

1995 ◽  
Vol 78 (11) ◽  
pp. 6784-6790 ◽  
Author(s):  
Jeong Soo Byun ◽  
Hyeong Joon Kim
Keyword(s):  
Refractory Metal ◽  
Silicide Formation ◽  
Si Substrate ◽  
Layer Sequence

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm Cmos Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
L. P. Ren ◽  
P. Liu ◽  
G. Z. Pan ◽  
Jason C. S. Woo
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Amorphous Layer ◽  
Sharp Interface ◽  
Silicide Formation ◽  
Si Substrate ◽  
Metal Thickness ◽  
Substrate Doping

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.

Marker Experiments for the moving Species in Silicides During Solid Phase Epitaxy of Evaporated Si

1983 ◽  
Vol 25 ◽  
Author(s):  
Chuen-Der Lien ◽  
Meir Bartur ◽  
Marc-A. Nicolet
Keyword(s):  
Nuclear Reaction ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicide Formation ◽  
Si Substrate ◽  
Marker Position

ABSTRACTEvaporated W, implanted Xe, and implanted 18O were used as markers to study the dominant moving species during (a) solid phase epitaxy (SPE) of evaporated Si, (b) silicide formation, and (c) oxidation of silicides on Si substrate.MeV 4He+ backscattering spectrometry and 18O (p, α)15 N nuclear reaction were used to monitor the evolution of elemental profiles as well as the change in the marker position. In most cases, the dominant moving species in SPE is the same as that observed in the formation and oxidation of that silicide. However, in CrSi2 the dominant moving species is Si during silicide formation, but Cr during SPE or oxidation.

Phase separation and silicide formation in the films of Pd-W alloys on Si

1990 ◽  
Vol 48 (4) ◽  
pp. 662-663
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Phase Separation ◽  
Grain Boundaries ◽  
Diffusion Processes ◽  
Silicide Formation ◽  
Si Substrate ◽  
Plan View ◽  
Alloy Films ◽  
Microelectronic Devices ◽  
Sputter Deposited

Pd-W alloy films are of interest because of their use for contact fabrication in microelectronic devices.In the present work Pd2 5W7 5, Pd4 0W6 0, Pd9 0W1 0 films were sputter deposited on Si(100) and only Pd9 0W1 0 films were polycrystalline.The amorphization of Pd- W films, possibly due to impurities, was not observed previously. The reaction of Pd9 0W1 0 films with a Si substrate begins at 200°C and leads to the formation of Pd2Si in two equivalent epitaxial orientations: A and B.In contrast to Ni-Nb films the presence of the native SiO2 layer under Pd-W alloy does not prevent the diffusion processes and the formation of silicides both on bulk and on plan-view specimens.Amorphous Pd-W films do not react with Si up to∼500°C and their crystallisation begins at T∼575°C.The reaction is also followed by the formation of two types of epitaxially oriented Pd2 Si islands as shown in Figure 1.The crystallisation of the films is accompanied by the formation of W grains.Pd crystals were not observed, that is possibly due to Pd precipitation at W grain boundaries.

On the influence of the surface pretreatment of a Si substrate on cobalt silicide formation

1990 ◽  
Vol 5 (7) ◽  
pp. 745-751 ◽  
Author(s):  
A L De Laere ◽  
R L Van Meirhaeghe ◽  
W H Laflere ◽  
F Cardon
Keyword(s):  
Cobalt Silicide ◽  
Silicide Formation ◽  
Si Substrate ◽  
Surface Pretreatment

Refractory metal silicide formation by ion beam mixing and rapid thermal annealing

1985 ◽  
Vol 47 (7) ◽  
pp. 688-691 ◽  
Author(s):  
D. L. Kwong ◽  
D. C. Meyers ◽  
N. S. Alvi ◽  
L. W. Li ◽  
E. Norbeck
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Refractory Metal ◽  
Ion Beam ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Ion Beam Mixing

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm CMOS Devices

1998 ◽  
Vol 514 ◽  
Author(s):  
L. P. Ren ◽  
P. Liu ◽  
G. Z. Pan ◽  
Jason C. S. Woo
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Amorphous Layer ◽  
Sharp Interface ◽  
Silicide Formation ◽  
Si Substrate ◽  
Metal Thickness ◽  
Substrate Doping

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAI silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.

Comparison of Kinetics of TiSi2 Formation on Si(100) and Si(111)

1986 ◽  
Vol 71 ◽  
Author(s):  
C. A. Pico ◽  
N. C. Tran ◽  
J. R. Jacobs ◽  
M. G. Lagally
Keyword(s):  
Refractory Metal ◽  
Eutectic Temperature ◽  
Vacuum System ◽  
Silicide Formation ◽  
Substrate Orientation ◽  
Si Substrates ◽  
Metal Silicides ◽  
Kinetics Of Formation ◽  
P Type ◽  
Kinetics Of

AbstractRefractory-metal silicides are currently receiving widespread attention because of their usefulness as interconnects in VLSI devices. Potentially the most important of these silicides is TiSi2. TiSi2 offers a sharp stable interface, a high process-compatible eutectic temperature, and the lowest resistivity of all refractory-metal silicides. Much of the previous work on TiSi2 [1-8] has been directed towards the understanding of the kinetics of silicide formation in order to optimize these electrical and interfacial properties. One parameter that may affect the silicide formation is substrate orientation [9]. We have compared the kinetics of formation of TiSi2 for Ti deposited onto p-type 10Ω-cm Si(100) and Si(111). All process parameters except substrate orientation were identical. 2800Å of Ti was electron-beam evaporated at a rate of 20Å/s and a background pressure of 9×10−8 torr onto chemically cleaned (HNO3, HF, rinse) Si substrates and subsequently annealed at temperatures between 470°C and 700°C in evacuated sealed quartz tubes. A turbopumped vacuum system was used to evacuate the quartz tube before sealing. A Ti getter was independently heated to remove remaining background contaminants prior to annealing.

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