Suspended graphene devices for electromechanics and quantum Hall effect (QHE) studies

2011 ◽  
Author(s):  
Vibhor Singh ◽  
Ganesh Subramaniam ◽  
Bushra Irfan ◽  
Mandar M. Deshmukh ◽  
Alka B. Garg ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Suspended Graphene ◽  
Graphene Devices

Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices

2010 ◽  
Vol 3 (7) ◽  
pp. 075102 ◽  
Author(s):  
Shinichi Tanabe ◽  
Yoshiaki Sekine ◽  
Hiroyuki Kageshima ◽  
Masao Nagase ◽  
Hiroki Hibino
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Epitaxial Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Graphene Devices

scholarly journals Fractional quantum Hall effect in suspended graphene probed with two-terminal measurements

2010 ◽  
Vol 368 (1932) ◽  
pp. 5403-5416 ◽  
Author(s):  
I. Skachko ◽  
X. Du ◽  
F. Duerr ◽  
A. Luican ◽  
D. A. Abanin ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Transport Model ◽  
Quantum Hall ◽  
Fractional Quantum Hall Effect ◽  
Mapping Technique ◽  
Fractional Quantum ◽  
Suspended Graphene ◽  
Fractional Quantum Hall ◽  
Quantum Hall State

Recently, fractional quantization of two-terminal conductance was reported in suspended graphene. The quantization, which was clearly visible in fields as low as 2 T and persistent up to 20 K in 12 T, was attributed to the formation of an incompressible fractional quantum Hall state. Here, we argue that the failure of earlier experiments to detect the integer and fractional quantum Hall effect with a Hall-bar lead geometry is a consequence of the invasive character of voltage probes in mesoscopic samples, which are easily shorted out owing to the formation of hot spots near the edges of the sample. This conclusion is supported by a detailed comparison with a solvable transport model. We also consider, and rule out, an alternative interpretation of the quantization in terms of the formation of a p–n–p junction, which could result from contact doping or density inhomogeneity. Finally, we discuss the estimate of the quasi-particle gap of the quantum Hall state. The gap value, obtained from the transport data using a conformal mapping technique, is considerably larger than in GaAs-based two-dimensional electron systems, reflecting the stronger Coulomb interactions in graphene.

scholarly journals Theory of the quantum Hall effect in finite graphene devices

2010 ◽  
Vol 81 (8) ◽  
Author(s):  
Tobias Kramer ◽  
Christoph Kreisbeck ◽  
Viktor Krueckl ◽  
Eric J. Heller ◽  
Robert E. Parrott ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Graphene Devices

Localization and many-body interactions in the quantum Hall effect determined by polarized optical emission

1991 ◽  
Vol 44 (8) ◽  
pp. 4006-4009 ◽  
Author(s):  
B. B. Goldberg ◽  
D. Heiman ◽  
M. Dahl ◽  
A. Pinczuk ◽  
L. Pfeiffer ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Optical Emission ◽  
Many Body ◽  
Many Body Interactions
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