Influence of quantum‐mechanical reflection at the emitter‐base spike on the base transit time through abrupt heterojunction bipolar transistors

1995 ◽  
Vol 78 (11) ◽  
pp. 6814-6817 ◽  
Author(s):  
T. Kumar ◽  
M. Cahay ◽  
S. Shi ◽  
K. Roenker
Keyword(s):  
Transit Time ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Quantum Mechanical

Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs

1998 ◽  
Vol 537 ◽  
Author(s):  
Shean-Yih Chiu ◽  
A. F. M. Anwar ◽  
Shangli Wu
Keyword(s):  
Transit Time ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Electron Velocity ◽  
Effective Electron ◽  
Low Field ◽  
Neutral Base ◽  
Double Heterojunction ◽  
Unity Gain ◽  
Base Width

AbstractBase transit time, τb, in abrupt npn GaN/InGaN/GaN and AlGaN/GaN/AlGaN double heterojunction bipolar transistors (DHBTs) is reported. Base transit time strongly depends not only on the quasi-neutral base width, but also on the low field electron mobility, μn, in the neutral base region and the effective electron velocity, Sc, at the edge of base-collector heterojunction. μn and Sc are temperature-dependent parameters. A unity gain cut-off frequency of 10.6 GHz is obtained in AlGaN/GaN/AlGaN DHBTs and 19.1 GHz in GaN/InGaN/GaN DHBTs for a neutral base width of 0.05um. It is also shown that non-stationary transport is not required to study τb for neutral base width in the range of 0.05um for GaN-based HBTs.

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