Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

1995 ◽  
Vol 78 (2) ◽  
pp. 1033-1038 ◽  
Author(s):  
Ján Kolník ◽  
İsmail H. Oğuzman ◽  
Kevin F. Brennan ◽  
Rongping Wang ◽  
P. Paul Ruden ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Band Structure ◽  
Electronic Transport ◽  
Monte Carlo Calculation ◽  
Ensemble Monte Carlo ◽  
Transport Studies

Hole transport properties of bulk zinc‐blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

1996 ◽  
Vol 80 (8) ◽  
pp. 4429-4436 ◽  
Author(s):  
İsmail H. Oğuzman ◽  
Ján Kolník ◽  
Kevin F. Brennan ◽  
Rongping Wang ◽  
Tzu‐Ning Fang ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Band Structure ◽  
Transport Properties ◽  
Monte Carlo Calculation ◽  
Hole Transport ◽  
Ensemble Monte Carlo ◽  
Zinc Blende

The gas-liquid transition for 12-6 argon: a grand ensemble Monte Carlo calculation

1980 ◽  
Vol 33 (4) ◽  
pp. 899
Author(s):  
JE Lane ◽  
TH Spurling
Keyword(s):  
Monte Carlo ◽  
Canonical Ensemble ◽  
Monte Carlo Calculation ◽  
Grand Canonical Ensemble ◽  
Previous Calculation ◽  
Ensemble Monte Carlo ◽  
Monte Carlo Calculations ◽  
Lennard Jones ◽  
Liquid Transition ◽  
Grand Canonical

New grand canonical ensemble Monte Carlo calculations of the gas-liquid transition for a Lennard-Jones 12-6 fluid confirm the validity of the previous calculation by Adams.

Grand ensemble Monte Carlo calculation of the thermodynamic properties of a solid/vapour interface

1976 ◽  
Vol 29 (10) ◽  
pp. 2103 ◽  
Author(s):  
JE Lane ◽  
TH Spurling
Keyword(s):  
Monte Carlo ◽  
Thermodynamic Properties ◽  
Particle Distribution ◽  
Canonical Ensemble ◽  
Monte Carlo Calculation ◽  
Distribution Functions ◽  
Surface Phase ◽  
Ensemble Monte Carlo ◽  
Surface Phase Transitions ◽  
Grand Canonical

The thermodynamic properties of the krypton/graphite interface have been evaluated by the grand canonical ensemble Monte Carlo method. Submonolayer adsorption isotherms have been calculated at temperatures of 77.31, 84.11 and 90.12 K, together with particle distribution functions, surface pressures and isosteric heats of adsorption. The results are compared with experiment and discussed in relation to the existence of surface phase transitions. The Monte Carlo adsorptions were used to check the error in assuming Henry's law adsorption at low pressure.

Ensemble Monte Carlo analysis of subpicosecond transient electron transport in cubic and hexagonal silicon carbide for high power SiC-MESFET devices

2015 ◽  
Vol 29 (16) ◽  
pp. 1550107 ◽  
Author(s):  
Youcef Belhadji ◽  
Benyounes Bouazza ◽  
Fateh Moulahcene ◽  
Nordine Massoum
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Temperature ◽  
Electron Transport ◽  
Band Structure ◽  
Monte Carlo Analysis ◽  
Structure Model ◽  
Velocity Overshoot ◽  
Ensemble Monte Carlo ◽  
Band Structure Model

In a comparative framework, an ensemble Monte Carlo was used to elaborate the electron transport characteristics in two different silicon carbide (SiC) polytypes 3C-SiC and 4H-SiC. The simulation was performed using three-valley band structure model. These valleys are spherical and nonparabolic. The aim of this work is to forward the trajectory of 20,000 electrons under high-flied (from 50 kV to 600 kV) and high-temperature (from 200 K to 700 K). We note that this model has already been used in other studies of many Zincblende or Wurtzite semiconductors. The obtained results, compared with results found in many previous studies, show a notable drift velocity overshoot. This last appears in subpicoseconds transient regime and this overshoot is directly attached to the applied electric field and lattice temperature.

Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN including a Pseudopotential Calculated Band Structure

1995 ◽  
Vol 395 ◽  
Author(s):  
I. H. Oguzman ◽  
J. Kolnik ◽  
K.F. Brennan ◽  
R. Wang ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electric Field ◽  
Drift Velocity ◽  
Monte Carlo Calculation ◽  
Average Energy ◽  
Hole Transport ◽  
Ensemble Monte Carlo ◽  
Scattering Rate ◽  
Valence Bands ◽  
Field Strengths

ABSTRACTIn this paper, we present ensemble Monte Carlo based calculations of the steady state hole transport properties, i.e. average energy, drift velocity, and band occupancy of zincblende GaN. The Monte Carlo calculation includes the full details of the valence bands and a numerically determined scattering rate derived from an empirical pseudopotential calculation. Calculations are made for electric field strengths up to 1000 kV/cm. It is found that the average hole energies are much lower than the corresponding electron energies at comparable electric field strengths, and that some anisotropy in the drift velocity and average energy appears at the higher fields examined here.

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