scholarly journals Ni induced few-layer graphene growth at low temperature by pulsed laser deposition

AIP Advances ◽  
2011 ◽  
Vol 1 (2) ◽  
pp. 022141 ◽  
Author(s):  
K. Wang ◽  
G. Tai ◽  
K. H. Wong ◽  
S. P. Lau ◽  
W. Guo
2018 ◽  
Vol 35 (4) ◽  
pp. 687-693 ◽  
Author(s):  
Umber Kalsoom ◽  
M. Shahid Rafique ◽  
Shamaila Shahzadi ◽  
Khizra Fatima ◽  
Rabia ShaheeN

Abstract The objective of the present research work is to optimize the growth conditions of bi- tri- and few-layer graphene using pulsed laser deposition (PLD) technique. The graphene was grown on n-type silicon (1 0 0) at 530 °C. Raman spectroscopy of the grown films revealed that the growth of low defect tri-layer graphene depended upon Ni content and uniformity of the Ni film. The line profile analysis of the AFM micrographs of the films also confirmed the formation of bi- tri- and a few-layer graphene. The deposited uniform Ni film matrix and carbon/Ni thickness ratio are the controlling factors for the growth of bitri- or few- layer graphene using pulsed laser deposition technique.


2017 ◽  
Vol 727 ◽  
pp. 1273-1279 ◽  
Author(s):  
Shihui Yu ◽  
Binhui Zhu ◽  
Haoran Zheng ◽  
Lingxia Li ◽  
Siliang Chen ◽  
...  

2010 ◽  
Vol 519 (5) ◽  
pp. 1540-1545 ◽  
Author(s):  
Ta-Kun Chen ◽  
Jiu-Yong Luo ◽  
Chung-Ting Ke ◽  
Hsian-Hong Chang ◽  
Tzu-Wen Huang ◽  
...  

2015 ◽  
Vol 28 (6) ◽  
pp. 065009 ◽  
Author(s):  
Pusheng Yuan ◽  
Zhongtang Xu ◽  
Haitao Zhang ◽  
Dongliang Wang ◽  
Yanwei Ma ◽  
...  

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