Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular‐beam epitaxy

1995 ◽  
Vol 78 (3) ◽  
pp. 1685-1688 ◽  
Author(s):  
Makoto Kudo ◽  
Tomoyoshi Mishima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Photoluminescence Properties ◽  
Highly Strained

Green/yellow luminescence from highly strained BeZnCdSe quantum wells grown by molecular beam epitaxy

2011 ◽  
Vol 9 (2) ◽  
pp. 255-258 ◽  
Author(s):  
J. Kasai ◽  
R. Akimoto ◽  
T. Hasama ◽  
H. Ishikawa ◽  
S. Fujisaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Yellow Luminescence ◽  
Highly Strained

Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells

2004 ◽  
Vol 43 (No. 12B) ◽  
pp. L1569-L1571 ◽  
Author(s):  
Masataka Ohta ◽  
Tomoyuki Miyamoto ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
Tatsuya Furuhata ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Optical Quality ◽  
Highly Strained
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