Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode

2011 ◽  
Vol 98 (25) ◽  
pp. 251114 ◽  
Author(s):  
Tae Hoon Seo ◽  
Kang Jea Lee ◽  
Tae Su Oh ◽  
Yong Seok Lee ◽  
Hyun Jeong ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Current Spreading ◽  
Light Emitting

Effect of Silver Nanoparticles Deposited on Indium Tin Oxide by Plasma-Assisted Hot-Filament Evaporation on Phosphorescent Organic Light-Emitting Diode Performance

2021 ◽  
pp. 151280
Author(s):  
Abtisam Hasan Hamood Al-Masoodi ◽  
Noor Azrina Talik ◽  
Boon Tong Goh ◽  
Mohd Arif Mohd Sarjidan ◽  
Ahmed H. H. Al-Masoodi ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Hot Filament

Visible Electroluminescence of a n+-Indium–Tin-Oxide/Sm-Doped i-TiO2/p-NiO/p+-Si Light-Emitting Diode

2013 ◽  
Vol 52 (6S) ◽  
pp. 06GG10 ◽  
Author(s):  
Takuya Ohtsuki ◽  
Susumu Harako ◽  
Syuji Komuro ◽  
Xinwei Zhao
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Light Emitting

GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2O3 powder

2009 ◽  
Vol 94 (16) ◽  
pp. 161107 ◽  
Author(s):  
T. K. Kim ◽  
S. H. Kim ◽  
S. S. Yang ◽  
J. K. Son ◽  
K. H. Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Al2o3 Powder ◽  
Transparent Layer

scholarly journals GEOMETRICAL ANALYSIS OF LIGHT-EMITTING DIODE FOR ENHANCING EXTRACTION EFFICIENCY

2020 ◽  
Vol 15 (6) ◽  
pp. 68-84
Author(s):  
ADAM SHAARI ◽  
◽  
AHMAD FAKHRURRAZI AHMAD NOORDEN ◽  
SAIFUL NAJMEE MOHAMAD ◽  
SUZAIRI DAUD ◽  
...  
Keyword(s):  
Contact Area ◽  
Indium Tin Oxide ◽  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Current Spreading ◽  
Light Emitting ◽  
Uniform Current ◽  
Electrode Contact

A non-uniform current spreading in the current spreader can greatly reduce the efficiency of the light-emitting diode (LED). The effects of the electrode contact area to the spreading layer towards extraction efficiency of LED chips is analysed in analytical simulations. Length of current spreading and light extraction efficiency is analysed for variation of contact area. The contact area value is varied by changing the shape of the electrode and the value of width of contact area. The increase in contact area decreases light extraction efficiency as more light are absorbed by the bottom electrode surface. The effective current spreading length for Indium Tin Oxide (ITO) of thickness 300nm is 36.44µm. The 6 strips ‘fork’ design is the most optimum. The design has the most area for photons produced in active region to escape without reducing the area cover with current density. This enables the chip to has more extraction efficiency with more uniform current spreading.

On a GaN-Based Light-Emitting Diode With an Indium–Tin–Oxide (ITO) Direct-Ohmic Contact Structure

2011 ◽  
Vol 23 (15) ◽  
pp. 1037-1039 ◽  
Author(s):  
Yi-Jung Liu ◽  
Chien-Chang Huang ◽  
Tai-You Chen ◽  
Chi-Shiang Hsu ◽  
Tsung-Yuan Tsai ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Ohmic Contact ◽  
Indium Tin Oxide ◽  
Contact Structure ◽  
Light Emitting Diode ◽  
Light Emitting
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