Physical origin of the resistance drift exponent in amorphous phase change materials

2011 ◽  
Vol 98 (24) ◽  
pp. 243506 ◽  
Author(s):  
Mattia Boniardi ◽  
Daniele Ielmini
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Physical Origin

scholarly journals High-field electrical transport in amorphous phase-change materials

2015 ◽  
Vol 118 (13) ◽  
pp. 135707 ◽  
Author(s):  
Matthias Kaes ◽  
Manuel Le Gallo ◽  
Abu Sebastian ◽  
Martin Salinga ◽  
Daniel Krebs
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Electrical Transport ◽  
High Field ◽  
Phase Change Materials

scholarly journals Uncovering β-relaxations in amorphous phase-change materials

2020 ◽  
Vol 6 (2) ◽  
pp. eaay6726 ◽  
Author(s):  
Si-Xu Peng ◽  
Yudong Cheng ◽  
Julian Pries ◽  
Shuai Wei ◽  
Hai-Bin Yu ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Amorphous Materials ◽  
Phase Change Materials ◽  
Special Kind ◽  
Relaxation Processes ◽  
Glass Transitions ◽  
Mechanical Spectroscopy ◽  
Characteristic Features ◽  
Β Relaxation

Relaxation processes are decisive for many physical properties of amorphous materials. For amorphous phase-change materials (PCMs) used in nonvolatile memories, relaxation processes are, however, difficult to characterize because of the lack of bulk samples. Here, instead of bulk samples, we use powder mechanical spectroscopy for powder samples to detect the prominent excess wings—a characteristic feature of β-relaxations—in a series of amorphous PCMs at temperatures below glass transitions. By contrast, β-relaxations are vanishingly small in amorphous chalcogenides of similar composition, which lack the characteristic features of PCMs. This conclusion is corroborated upon crossing the border from PCMs to non-PCMs, where β-relaxations drop substantially. Such a distinction implies that amorphous PCMs belong to a special kind of covalent glasses whose locally fast atomic motions are preserved even below the glass transitions. These findings suggest a correlation between β-relaxation and crystallization kinetics of PCMs, which have technological implications for phase-change memory functionalities.

scholarly journals Defects in amorphous phase-change materials

2013 ◽  
Vol 28 (9) ◽  
pp. 1139-1147 ◽  
Author(s):  
Jennifer Luckas ◽  
Daniel Krebs ◽  
Stephanie Grothe ◽  
Josef Klomfaß ◽  
Reinhard Carius ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Image Position

Abstract

Erratum: Signature of Tetrahedral Ge in the Raman Spectrum of Amorphous Phase-Change Materials [Phys. Rev. Lett.104, 085503 (2010)]

2011 ◽  
Vol 107 (3) ◽  
Author(s):  
Riccardo Mazzarello ◽  
Sebastiano Caravati ◽  
Stefano Angioletti-Uberti ◽  
Marco Bernasconi ◽  
Michele Parrinello
Keyword(s):  
Raman Spectrum ◽  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials

Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials

2012 ◽  
Vol 358 (17) ◽  
pp. 2412-2415 ◽  
Author(s):  
Daniel Krebs ◽  
Rüdiger M. Schmidt ◽  
Josef Klomfaβ ◽  
Jennifer Luckas ◽  
Gunnar Bruns ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Threshold Switching

SET Characteristics of Phase Change Bridge Devices

2008 ◽  
Vol 1072 ◽  
Author(s):  
Daniel Krebs ◽  
Simone Raoux ◽  
Charles T. Rettner ◽  
Robert M. Shelby ◽  
Geoffrey W. Burr ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Random Access ◽  
Stable States ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Switching Material ◽  
The Difference ◽  
Memory Applications

ABSTRACTScaling studies have demonstrated that Phase Change Random Access Memory (PCRAM) is one of the most promising candidates for future non-volatile memory applications. The search for suitable phase change materials with optimized properties is therefore actively pursuit. In this paper, SET (crystallization) characteristics of an ultra fast switching material Ge15Sb85 in phase change memory bridge cell devices are presented. It was found that reproducible switching between two stable states with one decade resistance contrast and current pulses as short as 10 ns for SET and RESET (re-amorphization) operation is possible. Particular emphasis was placed on the difference in crystallization kinetics between the as-deposited and melt-quenched amorphous phase. Evidence is given for the existence of an electrical field as the critical parameter for threshold switching rather than a threshold voltage. For Ge15Sb85 a threshold switching field of 9MV/m was measured and it was shown that switching from the melt-quenched amorphous phase to the crystalline phase is about 600 times faster than crystallization from the as-deposited amorphous phase.

scholarly journals Relation between bandgap and resistance drift in amorphous phase change materials

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Martin Rütten ◽  
Matthias Kaes ◽  
Andreas Albert ◽  
Matthias Wuttig ◽  
Martin Salinga
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials
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