scholarly journals High resolution multiple excitation spot optical microscopy

AIP Advances ◽  
2011 ◽  
Vol 1 (2) ◽  
pp. 022128 ◽  
Author(s):  
Shilpa Dilipkumar ◽  
Partha Pratim Mondal
Nanoimaging ◽  
2012 ◽  
pp. 373-394 ◽  
Author(s):  
Heath A. Huckabay ◽  
Kevin P. Armendariz ◽  
William H. Newhart ◽  
Sarah M. Wildgen ◽  
Robert C. Dunn

2017 ◽  
pp. 113-144 ◽  
Author(s):  
Nelly Hobeika ◽  
Maria Lourdes Martinez De Baños ◽  
Patrick Bouriat ◽  
Daniel Broseta ◽  
Ross Brown

2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.


2006 ◽  
Vol 70 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Thorsten Staudt ◽  
Marion C. Lang ◽  
Rebecca Medda ◽  
Johann Engelhardt ◽  
Stefan W. Hell

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