Electron hopping interactions in amorphous ZnO films probed by x-ray absorption near edge structure analysis

2011 ◽  
Vol 98 (22) ◽  
pp. 222108 ◽  
Author(s):  
Deok-Yong Cho ◽  
Jeong Hwan Kim ◽  
Cheol Seong Hwang
ACS Omega ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 14981-14985 ◽  
Author(s):  
Rui Yang ◽  
David J. Morris ◽  
Tatsuya Higaki ◽  
Matthew J. Ward ◽  
Rongchao Jin ◽  
...  

2020 ◽  
Vol 109 (6) ◽  
pp. 2095-2099
Author(s):  
Masataka Ito ◽  
Rika Shiba ◽  
Hironori Suzuki ◽  
Shuji Noguchi

2006 ◽  
Vol 6 (11) ◽  
pp. 3422-3425
Author(s):  
Veeramuthu Vaithianathan ◽  
Jong Ha Moon ◽  
Chang-Hwan Chang ◽  
Kandasami Asokan ◽  
Sang Sub Kim

The electronic structure of laser-deposited P-doped ZnO films was investigated by X-ray absorption near-edge structure spectroscopy (XANES) at the O K-, Zn K-, and Zn L3-edges. While the O K-edge XANES spectrum of the n-type P-doped ZnO demonstrates that the density of unoccupied states, primarily O 2p–P 3sp hybridized states, is significantly high, the O K-edge XANES spectrum of the p-type P-doped ZnO shows a sharp decrease in intensity of the corresponding feature indicating that P replaces O sites in the ZnO lattice, and thereby generating PO. This produces holes to maintain charge neutrality that are responsible for the p-type behavior of P-doped ZnO. Both the Zn K-, and Zn L3-edge XANES spectra of the P-doped ZnO reveal that Zn plays no significant role in the p-type behavior of ZnO:P.


2011 ◽  
Vol 18 (2) ◽  
pp. 238-244 ◽  
Author(s):  
Florian Meirer ◽  
Bernhard Pemmer ◽  
Giancarlo Pepponi ◽  
Norbert Zoeger ◽  
Peter Wobrauschek ◽  
...  

1993 ◽  
Vol 83 (1) ◽  
pp. 107-114 ◽  
Author(s):  
E. Burattini ◽  
A. Kisiel ◽  
R. Markowski ◽  
G. Dalba ◽  
W. Giriat

1992 ◽  
Vol 81 (2) ◽  
pp. 151-154 ◽  
Author(s):  
A. Kisiel ◽  
P.M. Lee ◽  
E. Burattini ◽  
G. Dalba ◽  
P. Fornasini ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document