Epitaxial growth of the high temperature ferromagnetic semiconductor Fe1.5Ti0.5O3 on silicon-compatible substrate

2011 ◽  
Vol 98 (23) ◽  
pp. 232501 ◽  
Author(s):  
Ali Hamie ◽  
Elena Popova ◽  
Yves Dumont ◽  
Ekaterina Chikoidze ◽  
Bénédicte Warot-Fonrose ◽  
...  
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Ferromagnetic Semiconductor

AEM of reaction-bonded SiC

1992 ◽  
Vol 50 (1) ◽  
pp. 344-345
Author(s):  
K Das Chowdhury ◽  
R. W. Carpenter ◽  
W. Braue
Keyword(s):  
Mechanical Properties ◽  
Phase Transformation ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Liquid Silicon ◽  
Structural Ceramic ◽  
Few Data

Research on reaction-bonded SiC (RBSiC) is aimed at developing a reliable structural ceramic with improved mechanical properties. The starting materials for RBSiC were Si,C and α-SiC powder. The formation of the complex microstructure of RBSiC involves (i) solution of carbon in liquid silicon, (ii) nucleation and epitaxial growth of secondary β-SiC on the original α-SiC grains followed by (iii) β>α-SiC phase transformation of newly formed SiC. Due to their coherent nature, epitaxial SiC/SiC interfaces are considered to be segregation-free and “strong” with respect to their effect on the mechanical properties of RBSiC. But the “weak” Si/SiC interface limits its use in high temperature situations. However, few data exist on the structure and chemistry of these interfaces. Microanalytical results obtained by parallel EELS and HREM imaging are reported here.

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth

2015 ◽  
Vol 821-823 ◽  
pp. 541-544 ◽  
Author(s):  
Yong Zhao Yao ◽  
Yukari Ishikawa ◽  
Yoshihiro Sugawara ◽  
Koji Sato
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Chemical Etching ◽  
Flat Surface ◽  
Mechanical Polishing ◽  
Wet Etching ◽  
Surface Damages

To remove the surface damages induced during mechanical polishing (MP) of 4H-SiC, a variety of wet etching recipes and etching conditions were studied. By evaluating the epilayers grown on these etching-treated wafers, it has been found that triangular defects (TRDs) are the main defects originated from the MP-induced damages in these samples. High temperature molten KCl etching at 1100 °C with KOH additive is very effective to remove the damaged surface while keeping a relatively flat surface. Epilayer grown on the KCl+KOH etched wafer showed a TRD density <0.9 cm-2.

Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

2017 ◽  
Vol 51 (2) ◽  
pp. 203-206 ◽  
Author(s):  
S. V. Sitnikov ◽  
S. S. Kosolobov ◽  
A. V. Latyshev
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Two Dimensional

scholarly journals Spintronics: Large‐Spin‐Gap Nodal‐Line Half‐Metal and High‐Temperature Ferromagnetic Semiconductor in Cr 2 X 3 (X=O,S,Se) Monolayers (Adv. Electron. Mater. 1/2020)

2020 ◽  
Vol 6 (1) ◽  
pp. 2070001
Author(s):  
Jian‐Yong Chen ◽  
Xing‐Xing Li ◽  
Wen‐Zhe Zhou ◽  
Jin‐Long Yang ◽  
Fang‐Ping Ouyang ◽  
...  
Keyword(s):  
High Temperature ◽  
Nodal Line ◽  
Ferromagnetic Semiconductor ◽  
Spin Gap ◽  
Half Metal ◽  
Large Spin

Molecular-beam-epitaxial growth of GaAs on high-temperature hydrogen-annealed (100) silicon

1987 ◽  
Vol 23 (20) ◽  
pp. 1079 ◽  
Author(s):  
T.P. Humphreys ◽  
K. Das ◽  
S.M. Bedair ◽  
J.J. Wortman ◽  
N. Parikh ◽  
...  
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Epitaxial TaC Films for the Selective Area Growth of SiC

2008 ◽  
Vol 600-603 ◽  
pp. 183-186 ◽  
Author(s):  
Kenneth A. Jones ◽  
T.S. Zheleva ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad ◽  
M. Ervin ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Lattice Parameter ◽  
Selective Area Growth ◽  
Recrystallization Process ◽  
High Temperature Annealing ◽  
Selective Area ◽  
Area Growth ◽  
Lattice Matched

At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000°C, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the higher temperatures remained virtually unchanged. Using TEM it is shown that the (0001) basal planes of the hexagonal 4H-SiC and Ta2C phases are aligned, and they were also parallel to the (111) plane in the cubic TaC with the [101] cubic direction being parallel to the hexagonal [2110] hexagonal direction. The Ta2C interlayer most likely is formed because its lattice parameter in the basel plane (3.103 Ǻ) is intermediate between that of the 4H-SiC (3.08 Ǻ) and the TaC (3.150 Ǻ). Given that Al.5Ga.5N is lattice matched to TaC, it could be an excellent substrate for the growth of GaN/AlGaN heterostructures.

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