Crystallization process of amorphous GaSb films studied by Raman spectroscopy

1995 ◽  
Vol 77 (8) ◽  
pp. 4044-4048 ◽  
Author(s):  
J. H. Dias da Silva ◽  
S. W. da Silva ◽  
J. C. Galzerani
Keyword(s):  
Raman Spectroscopy ◽  
Crystallization Process

Evidence for re-crystallization process in the irradiated graphite with heavy ions obtained by Raman spectroscopy

Carbon ◽  
2016 ◽  
Vol 101 ◽  
pp. 22-27 ◽  
Author(s):  
Pengfei Zhai ◽  
Jie Liu ◽  
Jian Zeng ◽  
Jinglai Duan ◽  
Lijun Xu ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Heavy Ions ◽  
Crystallization Process ◽  
Irradiated Graphite

Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 41-48 ◽  
Author(s):  
M. Holla ◽  
Tzanimir Arguirov ◽  
Winfried Seifert ◽  
Martin Kittler
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Raman Spectroscopy ◽  
Thermal Expansion ◽  
Electron Beam ◽  
Crystallization Process ◽  
Induced Current ◽  
Cathodoluminescence Spectroscopy ◽  
Electron Beam Induced Current ◽  
Optical And Mechanical Properties

We report on the optical and mechanical properties of Si3N4 inclusions, formed in the upper part of mc-Si blocks during the crystallization process. Those inclusions usually appear as crystalline hexagonal tubes or rods. Here we show that in many cases the Si3N4 inclusions contain crystalline Si in their core. The presence of the Si phase in the centre was proven by means of cathodoluminescence spectroscopy and imaging, electron beam induced current measurements and Raman spectroscopy. The crystalline Si3N4 phase was identified as β-Si3N4. Residual stress was revealed at the particles. While the stress is compressive in the Si material surrounding the Si3N4 particles tensile stress is found in the Si core. We assume that the stress is formed during cool down of the Si block and is a consequence of the larger thermal expansion coefficient of Si in comparison to that of β-Si3N4. Iron assisted nitridation of Si at temperatures below 1400 °C is considered a possible mechanism of Si3N4 formation.

Boron Doped Polycrystalline Silicon Produced By Step-by-Step XeCl Excimer Laser Crystallization

2006 ◽  
Vol 910 ◽  
Author(s):  
Rosari Saleh ◽  
Norbert H Nickel
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Crystallization Process ◽  
Chemical Potential ◽  
Laser Crystallization ◽  
Hydrogen Density ◽  
Boron Doped ◽  
Excimer Laser Crystallization ◽  
Hydrogen Effusion

AbstractA series of boron doped polycrystalline silicon were produced using step-by-step laser crystallization process from amorphous silicon. The influence of doping concentrations on laser- induced dehydrogenation and crystallization of amorphous silicon and on hydrogen bonding have been investigated employing Raman spectroscopy and hydrogen effusion measurements. From hydrogen effusion spectra the hydrogen chemical potential is determined as a function of hydrogen concentration, which can be related to the hydrogen density-of-states distribution. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy.

In-line monitoring of reactive crystallization process based on ATR-FTIR and Raman spectroscopy

2008 ◽  
Vol 22 (11-12) ◽  
pp. 644-652 ◽  
Author(s):  
Hannu Alatalo ◽  
Jarno Kohonen ◽  
Haiyan Qu ◽  
Henry Hatakka ◽  
Satu-Pia Reinikainen ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystallization Process ◽  
Reactive Crystallization ◽  
Ftir And Raman Spectroscopy

For1ation of Zeolites: A Molecular Description

1987 ◽  
Vol 111 ◽  
Author(s):  
Prabir K. Dutta ◽  
M. Puri ◽  
D. C. Shieh
Keyword(s):  
Raman Spectroscopy ◽  
Vibrational Spectra ◽  
Crystallization Process ◽  
Building Blocks ◽  
Monovalent Cations ◽  
Zeolite X ◽  
Zeolite Formation ◽  
Amorphous Aluminosilicate ◽  
Molecular Description

AbstractRaman spectroscopy of the solution, solid and gel phases present during crystallization of zeolite X was investigated. The vibrational data indicate that an amorphous aluminosilicate solid, composed primarily of four membered aluminosilicate rings is in contact with monomeric silicate ions during the prenucleation stages of the zeolite formation. No intermediate building blocks specific to zeolite X could be discerned from the vibrational spectra. The influence of a series of monovalent cations on the crystallization process was also examined, and a model of zeolite formation has been proposed.

Raman Spectroscopy Study of Pulsed Laser Induced Structural Transformations in Amorphous Ge Films

1995 ◽  
Vol 397 ◽  
Author(s):  
C. García ◽  
A.C. Prieto ◽  
J. Jiménez ◽  
J. Siegel ◽  
J. Solís ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystallization Process ◽  
Bond Angle ◽  
Pulsed Laser ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Structural Transformations ◽  
Spectroscopy Study ◽  
Glass Substrates ◽  
Average Bond

ABSTRACTStructural transformations induced in amorphous Ge films by picosecond laser pulses are studied by means of Raman spectroscopy and their dependence on parameters like the pulse fluence or the thermal conductivity of the substrate are analyzed. A correlation length model is used for studying the crystallization process, while the average bond angle distortion is used for determining the state of relaxation of the amorphous phase. Silicon and glass substrates are compared.

A novel synthetic strategy of Fe-ZSM-35 with pure framework Fe species and its formation mechanism

2018 ◽  
Vol 5 (8) ◽  
pp. 2031-2037 ◽  
Author(s):  
Xiaohua Ju ◽  
Fuping Tian ◽  
Yanli Wang ◽  
Fengtao Fan ◽  
Zhaochi Feng ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Formation Mechanism ◽  
Crystallization Process ◽  
Resonance Raman Spectroscopy ◽  
Resonance Raman ◽  
Synthetic Strategy ◽  
Fe Species ◽  
Uv Resonance Raman ◽  
Uv Resonance Raman Spectroscopy ◽  
Step Crystallization

A novel two-step crystallization process of Fe-ZSM-35 zeolite was designed, and analyzed by UV resonance Raman spectroscopy.

Raman scattering studies on slow crystallization process from amorphous PbTiO3

1983 ◽  
Vol 44 (11) ◽  
pp. 313-318 ◽  
Author(s):  
Masaaki Takashige ◽  
Terutaro Nakamura ◽  
Yutaka Aikawa
Keyword(s):  
Raman Scattering ◽  
Crystallization Process
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