scholarly journals Electrical and optical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy

1995 ◽  
Vol 77 (1) ◽  
pp. 402-404 ◽  
Author(s):  
P. A. Postigo ◽  
M. L. Dotor ◽  
P. Huertas ◽  
D. Golmayo ◽  
F. Briones
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Electrical And Optical Properties

scholarly journals Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy

1999 ◽  
Vol 85 (9) ◽  
pp. 6567-6570 ◽  
Author(s):  
P. A. Postigo ◽  
M. L. Dotor ◽  
P. Huertas ◽  
F. Garcı́a ◽  
D. Golmayo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Electrical And Optical Properties

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Si:Er:O layers grown by molecular beam epitaxy: structural, electrical and optical properties

2001 ◽  
Vol 81 (1-3) ◽  
pp. 62-66 ◽  
Author(s):  
S. Scalese ◽  
G. Franzò ◽  
S. Mirabella ◽  
M. Re ◽  
A. Terrasi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical And Optical Properties
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