Hydrogen‐surface reactions during the growth of hydrogenated amorphous silicon by reactive magnetron sputtering: A real time kinetic study byin situinfrared absorption

1995 ◽  
Vol 77 (12) ◽  
pp. 6247-6256 ◽  
Author(s):  
M. Katiyar ◽  
Y. H. Yang ◽  
J. R. Abelson
Keyword(s):  
Magnetron Sputtering ◽  
Kinetic Study ◽  
Amorphous Silicon ◽  
Real Time ◽  
Surface Reactions ◽  
Hydrogenated Amorphous Silicon ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Hydrogenated Amorphous

Properties of Hydrogenated Amorphous Silicon-Germanium Alloys Deposited by Dual Target Reactive Magnetron Sputtering

2012 ◽  
Vol 1426 ◽  
pp. 301-306
Author(s):  
Samuel J. Levang ◽  
James R. Doyle
Keyword(s):  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogen Partial Pressure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium alloy thin films (a-Si1-xGex:H) were deposited using reactive magnetron sputtering. Dual targets of silicon and germanium were sputtered in an argon + hydrogen atmosphere using rf excitation. Films with x = 0.4 were deposited as a function of substrate temperature and hydrogen partial pressure, and were evaluated by dark and photoconductivity, infrared absorption, and optical transmission. Photosensitivity reached a maximum value of about 5000 between 150 and 200 °C. Using the stretching modes in the region of 2000 cm-1, the hydrogen bonding was characterized in terms of the preferential attachment ratio (PA), which represents the ratio of H bonded to silicon to that bonded to germanium. The PA shows a systematic increase with increasing temperature, independent of hydrogen partial pressure. The interplay between thermodynamic and kinetics effects in determining PA and film quality will be discussed.

Sign in / Sign up

Export Citation Format

Share Document