Dispersion of electron g-factor with optical transition energy in (In,Ga)As/GaAs self-assembled quantum dots

2011 ◽  
Vol 98 (23) ◽  
pp. 233102 ◽  
Author(s):  
A. Schwan ◽  
B.-M. Meiners ◽  
A. B. Henriques ◽  
A. D. B. Maia ◽  
A. A. Quivy ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Transition Energy ◽  
Optical Transition ◽  
G Factor ◽  
Optical Transition Energy ◽  
Self Assembled

Intraband optical transition energy in type-I group II to VI spherical quantum dots

2015 ◽  
Vol 9 (1) ◽  
pp. 093069 ◽  
Author(s):  
Christina Lily Jasmine Paul ◽  
John Peter Amalorpavam ◽  
Chang Woo Lee
Keyword(s):  
Quantum Dots ◽  
Transition Energy ◽  
Optical Transition ◽  
Type I ◽  
Optical Transition Energy ◽  
Group Ii

Tuning the g-factor of neutral and charged excitons confined to self-assembled (Al,Ga)As shell quantum dots

2014 ◽  
Vol 105 (22) ◽  
pp. 223111 ◽  
Author(s):  
P. Corfdir ◽  
Y. Fontana ◽  
B. Van Hattem ◽  
E. Russo-Averchi ◽  
M. Heiss ◽  
...  
Keyword(s):  
Quantum Dots ◽  
G Factor ◽  
Self Assembled

scholarly journals Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

2018 ◽  
Vol 9 ◽  
pp. 1075-1084
Author(s):  
Tarek A Ameen ◽  
Hesameddin Ilatikhameneh ◽  
Archana Tankasala ◽  
Yuling Hsueh ◽  
James Charles ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Absorption ◽  
Quantum Dot ◽  
Mole Fraction ◽  
Theoretical Study ◽  
Energy Gap ◽  
Optical Transition ◽  
Binding Model ◽  
Self Assembled ◽  
Absorption Wavelength

A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these devices. We also show that for doped quantum dots, many-particle configuration interaction is also critical to accurately capture the optical transitions of the system. The sophisticated models presented in this work reproduce the experimental results for both undoped and doped quantum dot systems. The effects of alloy mole fraction of the strain controlling layer and quantum dot dimensions are discussed. Increasing the mole fraction of the strain controlling layer leads to a lower energy gap and a larger absorption wavelength. Surprisingly, the absorption wavelength is highly sensitive to the changes in the diameter, but almost insensitive to the changes in dot height. This behavior is explained by a detailed sensitivity analysis of different factors affecting the optical transition energy.

Photoreflectance Investigation of Inas/Gaas Self-Assembled Quantum Dots Grown by Almbe

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Geddol ◽  
R. Ferrinm ◽  
G. Guizzetti ◽  
M. Patrini ◽  
S. Franchi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
Molecular Beam ◽  
State Transition ◽  
Transition Energy ◽  
Atomic Layer ◽  
Optical Response ◽  
Spectral Features ◽  
Modulation Spectroscopy ◽  
Self Assembled

AbstractPhotoreflectance measurements have been performed in the 0.8–1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. The spectral features due to the QD optical response were analyzed by using lineshape models characteristic of modulation spectroscopy of confined systems. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and it is shown that Coulomb interaction can account for the observed different behavior of the ensemble optical response of QD families characterized by different morphologies and coexisting in the same sample.

scholarly journals Fine tuning of optical transition energy of twisted bilayer graphene via interlayer distance modulation

2017 ◽  
Vol 95 (8) ◽  
Author(s):  
Elena del Corro ◽  
Miriam Peña-Alvarez ◽  
Kentaro Sato ◽  
Angel Morales-Garcia ◽  
Milan Bousa ◽  
...  
Keyword(s):  
Transition Energy ◽  
Optical Transition ◽  
Bilayer Graphene ◽  
Fine Tuning ◽  
Interlayer Distance ◽  
Optical Transition Energy ◽  
Twisted Bilayer Graphene

Mapping the g factor anisotropy of InAs self-assembled quantum dots

2002 ◽  
Vol 12 (1-4) ◽  
pp. 802-805 ◽  
Author(s):  
I. Hapke-Wurst ◽  
U. Zeitler ◽  
R.J. Haug ◽  
K. Pierz
Keyword(s):  
Quantum Dots ◽  
G Factor ◽  
Self Assembled
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