Metalorganic molecular beam epitaxy growth characteristics of GaAs using triethylgallium and trisdimethylaminoarsenic
1994 ◽
Vol 136
(1-4)
◽
pp. 376-380
◽
1993 ◽
pp. 1633-1636
1994 ◽
Vol 136
(1-4)
◽
pp. 1-10
◽
1991 ◽
Vol 107
(1-4)
◽
pp. 1009-1014
◽
Metalorganic molecular beam epitaxy growth of ZnSe with new Zn and Se precursors without precracking
1995 ◽
Vol 150
◽
pp. 734-737
◽
1990 ◽
Vol 105
(1-4)
◽
pp. 240-243
◽
1994 ◽
Vol 136
(1-4)
◽
pp. 204-209
◽
1994 ◽
Vol 136
(1-4)
◽
pp. 83-88
◽
1989 ◽
Vol 95
(1-4)
◽
pp. 158-162
◽