Porous hot-wire deposited WO3 films with high optical transmission

2011 ◽  
Vol 109 (10) ◽  
pp. 103527 ◽  
Author(s):  
G. Papadimitropoulos ◽  
N. Vourdas ◽  
K. Giannakopoulos ◽  
M. Vasilopoulou ◽  
D. Davazoglou
Keyword(s):  
Optical Transmission ◽  
Hot Wire ◽  
High Optical Transmission

A Multilayer PDMS Microfluidic with High Optical Transmission for DNA Detection

2016 ◽  
Vol 7 (3) ◽  
pp. 165-171
Author(s):  
Marianah Masrie ◽  
Jumril Yunas ◽  
Burhanuddin Yeop Majlis
Keyword(s):  
Optical Transmission ◽  
Dna Detection ◽  
High Optical Transmission

Large Scale Translucent Y-α-Sialon Ceramics Prepared by Two-Steps Hot Pressing

2010 ◽  
Vol 434-435 ◽  
pp. 668-670
Author(s):  
Jiu Jun Xu ◽  
Ying Chun Shan ◽  
Jiang Tao Li ◽  
Yong Ge Cao
Keyword(s):  
Fracture Toughness ◽  
Optical Property ◽  
Wavelength Range ◽  
Hot Pressing ◽  
Large Scale ◽  
Optical Transmission ◽  
Transmission Property ◽  
Infrared Transmittance ◽  
Hot Pressing Sintering ◽  
High Optical Transmission

Large scale translucent yttrium-doped α-sialon (80 mm in diameter) with the composition of Y0.4Si9.6Al2.4O1.2N14.8 (m=1.2 and n=1.0) was prepared by two-steps hot pressing sintering (first heating to 1850 °C holding for 30 min, then continue heating to 1900 °C holding for 30 min) at 25 MPa in nitrogen, and the optical property was approached over the wavelength range 900-5000 nm. The results showed that dense sample was obtained and its assemblage only consisted of single α-sialon phase. The large scale sialon had uniform and higher infrared transmittance property. The maximum infrared transmittance for 1.0 mm thick specimen could reach 66% at 3200 nm. It is attributed to the dense, uniform, equaxed microstructure. In addition to high optical transmission property, the sample showed higher hardness of 20 GPa and better fracture toughness of 5 MPa•m1/2.

GaSb/AlGaSb COMPOUND SEMICONDUCTORS GROWN BY MOCVD FOR OPTOELECTRONIC APPLICATIONS

2006 ◽  
Vol 15 (03) ◽  
pp. 323-329
Author(s):  
A. H. RAMELAN ◽  
I. YAHYA ◽  
PRASODJO ◽  
E. M. GOLDYS
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Optical Transmission ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Optical Quality ◽  
Al Content ◽  
Donor Acceptor ◽  
Very High ◽  
High Optical Transmission

Al x Ga 1-x Sb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl , TMGa and TMSb precursors. We report the effects of growth conditions on the optical properties. Samples grown at temperatures of 540°C, 580°C and 600°C and a V/III ratio of 1 have been investigated. The Al x Ga 1-x Sb layers grown at 580°C and 600°C with a V/III ratio of 1 and Al content in the range of 0.5% to 25% were found to exhibit excellent optical quality with a very high optical transmission at energies below the bandgap. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.

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