Erratum: ‘‘Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition’’ [J. Appl. Phys. 73, 4095 (1993)]

1994 ◽  
Vol 76 (4) ◽  
pp. 2562-2562
Author(s):  
Paul R. Berger ◽  
S. N. G. Chu ◽  
R. A. Logan ◽  
Erin Byrne ◽  
D. Coblentz ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Substrate Orientation ◽  
Dopant Incorporation ◽  
Orientation Effects ◽  
Metalorganic Chemical

Effect of Doping on the Growth of InGaP by Low Pressure Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 300 ◽  
Author(s):  
C.H. Wu ◽  
M.S. Feng ◽  
C.C. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Doping Concentration ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Low Pressure ◽  
Growth Layer ◽  
Dopant Incorporation ◽  
Metalorganic Chemical

ABSTRACTA study of the effect of dopant incorporation on the growth of InGaP by low pressure metalorganic chemical vapor deposition has been performed, in which diethylzinc (DEZn) and H2Se are used as p and n-type doping sources, respectively. The enhancement of interdiffusion, i.e., the disordering of a InGaP layer has been observed due to the introduction of Zn into the growth layer, as indicated by the decrease of intensity of the extra spots on TEM diffraction results. In addition, streaky and wavy diffraction pattern for Se-doped layer reveals the formation of anti-phase domains on a growth layer. According to PL measurement, the emission energy of the grown layer is a function of doping concentration, for which the energy shift as high as 141 meV has been obtained at heavily zinc doping concentration. Therefore, by varying the doping concentration, energy shift can be controlled, providing a potential for its application in optical devices.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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