Examination of electrical and optical properties of vanadium in bulkn‐type silicon carbide

1994 ◽  
Vol 76 (10) ◽  
pp. 5769-5772 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Type Silicon

Electrical and optical properties of gold‐dopedn‐type silicon

1989 ◽  
Vol 65 (1) ◽  
pp. 137-145 ◽  
Author(s):  
H. Weman ◽  
A. Henry ◽  
T. Begum ◽  
B. Monemar ◽  
O. O. Awadelkarim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Type Silicon

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Study of the Electrical and Optical Properties of the Silicon Carbide Thin Film

2019 ◽  
Vol 34 (1) ◽  
pp. 557-561
Author(s):  
Rui Luo ◽  
Huidong Yang ◽  
Bo Huang ◽  
B. Y. Xu
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Electrical And Optical Properties

UV-Sensitive Metal-Semiconductor Photodiodes on 6H-SIC.

1994 ◽  
Vol 339 ◽  
Author(s):  
Christer Fröjdh ◽  
Göran Thungström ◽  
Hans-Erik Nilsson ◽  
C. Sture Petersson
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Fabrication Process ◽  
Electrical And Optical Properties ◽  
Peak Sensitivity

ABSTRACTSchottky diodes on Silicon Carbide (SiC) are of interest for many applications because of the relatively simple fabrication process. In this work we have fabricated Schottky diodes by evaporation of Ti on 6H-SiC and measured their electrical and optical properties. Most of the diodes show good rectifying behaviour with low reverse current and an ideality factor below 1.20. The photoresponse of the diodes has been measured in the range 200 – 400 nm. The peak sensitivity was found to be at 270 nm.

Electrical and optical properties of erbium-related centers in 6H silicon carbide

2001 ◽  
Vol 308-310 ◽  
pp. 687-690 ◽  
Author(s):  
O Klettke ◽  
S.A Reshanov ◽  
G Pensl ◽  
Y Shishkin ◽  
R.P Devaty ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Electrical And Optical Properties

Electrical and optical properties of p-type silicon based on polypyrrole-derivative polymer

2011 ◽  
Vol 161 (9-10) ◽  
pp. 692-697 ◽  
Author(s):  
Ahmet Faruk Özdemir ◽  
Sinem Gürkan Aydin ◽  
Durmuş Ali Aldemir ◽  
Songül Şen Gürsoy
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Type Silicon ◽  
P Type ◽  
Silicon Based
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