Size effects on switching field of isolated and interactive arrays of nanoscale single‐domain Ni bars fabricated using electron‐beam nanolithography

1994 ◽  
Vol 76 (10) ◽  
pp. 6679-6681 ◽  
Author(s):  
Mark S. Wei ◽  
Stephen Y. Chou
Keyword(s):  
Electron Beam ◽  
Size Effects ◽  
Single Domain ◽  
Switching Field

Nano-Imprint Patterning of Nanowire Structures for Interconnect Study

2005 ◽  
Author(s):  
Bin Li ◽  
Anastassios Mavrokefalos ◽  
Jianhua Zhou ◽  
Li Shi ◽  
Paul S. Ho ◽  
...  
Keyword(s):  
Electron Beam ◽  
Cross Section ◽  
Silicon Nanowires ◽  
Size Effects ◽  
Silicon On Insulator ◽  
Si Nanowires ◽  
Section Surface ◽  
Etching Mask ◽  
Interconnect Lines ◽  
Nano Imprint

A thermal nano-imprint method has been developed to pattern sub-40 nm polymer lines of Hydrogensilsesquioxane (HSQ) and electron beam resist ZEP 520A. The imprint template was the cross section surface of a selectively etched GaAs/AlGaAs heterostructure wafer. Silicon nanowires were formed using reactive ion etching (RIE) of a silicon-on-insulator wafer with the polymer nanolines as an etching mask. The obtained Si nanowires were well defined and continuous for a length up to hundreds of microns. Reaction of the silicon lines with a metal can lead to the formation of silicide interconnect lines, which is used to investigate the size effects on the transport and electromigration properties of interconnects for future microelectronics.

scholarly journals Size effects in compression in Electron Beam Melted Ti6Al4V diamond structure lattices

2017 ◽  
Vol 190 ◽  
pp. 138-142 ◽  
Author(s):  
S.J.N. Morrish ◽  
M. Pedersen ◽  
K.F.W. Wong ◽  
I. Todd ◽  
R. Goodall
Keyword(s):  
Electron Beam ◽  
Size Effects ◽  
Diamond Structure

scholarly journals Field dependence of the switching field for nonellipsoidal single domain particles

2002 ◽  
Vol 91 (10) ◽  
pp. 7050 ◽  
Author(s):  
Martha Pardavi-Horvath ◽  
Gabor Vertesy
Keyword(s):  
Field Dependence ◽  
Single Domain ◽  
Switching Field

Single domain wall magnetoresistance electron-beam fabrication and magnetoresistance measurement

2011 ◽  
Author(s):  
Yudong Wang ◽  
C. H. de Groot ◽  
D. Claudio-González ◽  
M. D. B. Charlton
Keyword(s):  
Electron Beam ◽  
Domain Wall ◽  
Single Domain

Thermal switching field distribution of a single domain particle for field-dependent attempt frequency

2012 ◽  
Vol 112 (2) ◽  
pp. 023903 ◽  
Author(s):  
L. Breth ◽  
D. Suess ◽  
C. Vogler ◽  
B. Bergmair ◽  
M. Fuger ◽  
...  
Keyword(s):  
Field Distribution ◽  
Single Domain ◽  
Switching Field ◽  
Single Domain Particle ◽  
Field Dependent ◽  
Thermal Switching ◽  
Switching Field Distribution

Switching field studies of individual single domain Ni columns

1997 ◽  
Vol 81 (8) ◽  
pp. 5458-5460 ◽  
Author(s):  
R. O’Barr ◽  
S. Schultz
Keyword(s):  
Field Studies ◽  
Single Domain ◽  
Switching Field

Particles size effects of single domain CoFe2O4 on suspensions stability

2012 ◽  
Vol 324 (5) ◽  
pp. 671-676 ◽  
Author(s):  
Gang Jian ◽  
Qiuyun Fu ◽  
Dongxiang Zhou
Keyword(s):  
Size Effects ◽  
Single Domain

An Investigation of Film Thickness Effect on Mechanical Properties of Au Films Using Nanoindentation Techniques

2005 ◽  
Vol 875 ◽  
Author(s):  
Yifang Cao ◽  
Zong Zong ◽  
Wole Soboyejo
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electron Beam ◽  
Film Thickness ◽  
Size Effects ◽  
Experimental Studies ◽  
Thickness Effect ◽  
Length Scale ◽  
Indentation Size ◽  
Au Thin Films

AbstractThis paper presents the results of nanoindentation experimental studies of Au thin films with different thicknesses. The effects of film thickness and microstructure on the hardnesses of electron-beam deposited Au films were studied in terms of Hall-Petch relationship. The effects of different thicknesses on indentation size effects (ISE) are explained within the framework of mechanism-based strain gradient (MSG) theory using the concept of microstructural length scale.

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