scholarly journals Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

2011 ◽  
Vol 109 (8) ◽  
pp. 084522 ◽  
Author(s):  
Cemil Kayis ◽  
C. Y. Zhu ◽  
Mo Wu ◽  
X. Li ◽  
Ümit Özgür ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

2000 ◽  
Vol 76 (23) ◽  
pp. 3442-3444 ◽  
Author(s):  
J. A. Garrido ◽  
B. E. Foutz ◽  
J. A. Smart ◽  
J. R. Shealy ◽  
M. J. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Mobility Fluctuations

LOW FREQUENCY NOISE IN GALLIUM NITRIDE FIELD EFFECT TRANSISTORS

2002 ◽  
Vol 12 (02) ◽  
pp. 449-458 ◽  
Author(s):  
SERGEY L. RUMYANTSEV ◽  
MICHAEL S. SHUR ◽  
REMIS GASKA ◽  
MICHAEL. E. LEVINSHTEIN ◽  
M. ASIF KHAN ◽  
...  
Keyword(s):  
Field Effect ◽  
Electron Tunneling ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We report on experimental study of the low frequency noise in GaN-based Field Effect Transistors. In both GaN Metal Semiconductor Field Effect Transistors (MESFETs) and AlGaN/GaN Heterostructure Field Effect Transistors (HFETs), the main noise sources are located in the channel. Gate voltage dependence of noise in MESFETs complies with the Hooge formula and indicates the bulk origin of noise. The dependencies of the Hooge parameter, α, on sheet electron concentration ns in HFETs are extracted from measured drain current fluctuations taking into account the contact resistance, and the resistance of the ungated regions of the transistors. At low channel concentrations α is inversely proportional to ns (α ~ 1/ns). This dependence as well as the temperature dependence of noise might be explained by electron tunneling from the 2D gas into the traps in the bulk GaN or AlGaN.

Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors

2003 ◽  
Vol 39 (11) ◽  
pp. 877
Author(s):  
S.C. Wei ◽  
Y.K. Su ◽  
T.M. Kuan ◽  
R.L. Wang ◽  
S.J. Chang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

2002 ◽  
Vol 92 (8) ◽  
pp. 4726-4730 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Y. Deng ◽  
E. Borovitskaya ◽  
A. Dmitriev ◽  
W. Knap ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Cryogenic Temperatures ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors
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