Energy levels of single and coupled quantum wells embedded in cylindrical buffer barriers affected by an axial magnetic field

1994 ◽  
Vol 76 (4) ◽  
pp. 2547-2549 ◽  
Author(s):  
Er‐Xuan Ping ◽  
Vikram Dalal
1999 ◽  
Vol 60 (8) ◽  
pp. 5698-5704 ◽  
Author(s):  
A. Hernández-Cabrera ◽  
P. Aceituno ◽  
F. T. Vasko

2007 ◽  
Vol 24 (8) ◽  
pp. 2383-2386 ◽  
Author(s):  
Gong Jian ◽  
Yang Fu-Hua ◽  
Feng Song-Lin

1999 ◽  
Vol 12 (3) ◽  
pp. 347-350 ◽  
Author(s):  
Zi-xin Liu ◽  
Zhen-jiang Lai ◽  
Yong-chang Huang ◽  
Ya Liu ◽  
Guo-jun Cheng

2013 ◽  
Vol 06 (02) ◽  
pp. 1350021 ◽  
Author(s):  
GUO-EN WENG ◽  
BAO-PING ZHANG ◽  
MING-MING LIANG ◽  
XUE-QIN LV ◽  
JIANG-YONG ZHANG ◽  
...  

Optical properties and carrier dynamics of InGaN/GaN asymmetric coupled quantum wells (ACQWs) are studied by excitation-power-dependent photoluminescence (PL), photoreflectance (PR) and time-resolved PL (TRPL) experiments. Under weak excitations, only the emission from the widest well is observed due to the tunneling from narrower to wider wells. Under strong excitations, the carrier distribution becomes more uniform and an enhanced emission from the mid well (2.5 nm well) is observed. Dependence of the PL intensity on excitation power is well explained by a rate equation model. The energy levels in the ACQW structure are clearly revealed by PR measurements and are in good agreement with calculations. Our results indicate that the enhanced emission from the mid well is ascribed to "reverse tunneling" from 3.0 to 2.5 nm well, which is confirmed by TRPL experiments.


1996 ◽  
Vol 53 (3) ◽  
pp. 1522-1530 ◽  
Author(s):  
O. E. Raichev ◽  
F. T. Vasko

Sign in / Sign up

Export Citation Format

Share Document