Molecular‐beam‐epitaxial growth and characterization of high‐quality alloys and multiple quantum wells on InP substrates using a post‐evaporation‐heated arsenic source

1994 ◽  
Vol 76 (6) ◽  
pp. 3429-3442 ◽  
Author(s):  
R. P. Leavitt ◽  
J. L. Bradshaw
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Multiple Quantum ◽  
High Quality ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Inp Substrates ◽  
Arsenic Source

Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

2006 ◽  
Vol 88 (19) ◽  
pp. 191115 ◽  
Author(s):  
Fumitaro Ishikawa ◽  
Michael Höricke ◽  
Uwe Jahn ◽  
Achim Trampert ◽  
Klaus H. Ploog
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Long Wavelength ◽  
Molecular Beam Epitaxial ◽  
Wavelength Emission ◽  
Molecular Beam Epitaxial Growth

Molecular Beam Epitaxial Growth and Characterization of GaAs1-ySbyLayers on (111)B InP Substrates

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1012-1015 ◽  
Author(s):  
Toshiyuki Higashino ◽  
Yuichi Kawamura ◽  
Masato Fujimoto ◽  
Atsushi Kondo ◽  
Hideki Takasaki ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Inp Substrates
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