Mesoscopic transport in Si metal‐oxide‐semiconductor field‐effect transistors with a dual‐gate structure

Hideyuki Matsuoka; Tsuneo Ichiguchi; Toshiyuki Yoshimura; Eiji Takeda

doi:10.1063/1.357159

Mesoscopic transport in Si metal‐oxide‐semiconductor field‐effect transistors with a dual‐gate structure

Journal of Applied Physics ◽

10.1063/1.357159 ◽

1994 ◽

Vol 76 (9) ◽

pp. 5561-5566 ◽

Cited By ~ 6

Author(s):

Hideyuki Matsuoka ◽

Tsuneo Ichiguchi ◽

Toshiyuki Yoshimura ◽

Eiji Takeda

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mesoscopic Transport ◽

Gate Structure ◽

Dual Gate

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Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure

Applied Physics Letters ◽

10.1063/1.111085 ◽

1994 ◽

Vol 64 (5) ◽

pp. 586-588 ◽

Cited By ~ 31

Author(s):

Hideyuki Matsuoka ◽

Tsuneo Ichiguchi ◽

Toshiyuki Yoshimura ◽

Eiji Takeda

Keyword(s):

Metal Oxide ◽

Coulomb Blockade ◽

Field Effect ◽

Field Effect Transistor ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Structure ◽

Dual Gate ◽

Effect Transistor

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Fabrication and electrical characteristics of dual-gate ZnO nanorod metal–oxide semiconductor field-effect transistors

Nanotechnology ◽

10.1088/0957-4484/17/11/s16 ◽

2006 ◽

Vol 17 (11) ◽

pp. S327-S331 ◽

Cited By ~ 51

Author(s):

Hyeong-Jin Kim ◽

Chul-Ho Lee ◽

Dong-Wook Kim ◽

Gyu-Chul Yi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zno Nanorod ◽

Electrical Characteristics ◽

Dual Gate

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Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1124 ◽

2007 ◽

Vol 46 (3A) ◽

pp. 1124-1128

Author(s):

Wen-Cheng Lo ◽

Shien-Yang Wu ◽

Sun-Jay Chang ◽

Mu-Chi Chiang ◽

Chih-Yung Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dual Gate

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Dual-gate-material-based device design for unipolar metal oxide semiconductor-like carbon nanotube field effect transistors

Acta Physica Sinica ◽

10.7498/aps.59.5010 ◽

2010 ◽

Vol 59 (7) ◽

pp. 5010

Author(s):

Zhou Hai-Liang ◽

Zhang Min-Xuan ◽

Fang Liang

Keyword(s):

Carbon Nanotube ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Design ◽

Dual Gate

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Broadband complementary metal‐oxide semiconductor single‐pole‐double‐throw switch with improved power handling capability using dual‐gate metal‐oxide semiconductor field‐effect transistors

IET Microwaves Antennas & Propagation ◽

10.1049/iet-map.2013.0463 ◽

2015 ◽

Vol 9 (6) ◽

pp. 502-507

Author(s):

Fan‐Hsiu Huang ◽

Yue‐Ming Hsin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Power Handling ◽

Power Handling Capability ◽

Dual Gate

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Cited By ~ 21

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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