Enhanced electron-hole plasma stimulated emission in optically pumped gallium nitride nanopillars

2011 ◽  
Vol 98 (12) ◽  
pp. 121101 ◽  
Author(s):  
M.-H. Lo ◽  
Y.-J. Cheng ◽  
H.-C. Kuo ◽  
S.-C. Wang
Keyword(s):  
Gallium Nitride ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma

Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Bidnyk ◽  
T. J. Schmidt ◽  
B. D. Little ◽  
J. J. Song
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Electron Hole ◽  
Electron Hole Plasma ◽  
Narrow Emission ◽  
Threshold Gain ◽  
Near Threshold

ABSTRACTWe report the results of an experimental study on near-threshold gain mechanisms in optically pumped GaN epilayers and InGaN/GaN heterostructures at temperatures as high as 700 K. We show that the dominant near-threshold gain mechanism in GaN epilayers is inelastic excitonexciton scattering for temperatures below ∼ 150 K, characterized by band-filling phenomena and a relatively low stimulated emission (SE) threshold. An analysis of both the temperature dependence of the SE threshold and the relative shift between stimulated and band-edge related emission indicates electron-hole plasma is the dominant gain mechanism for temperatures exceeding 150 K. The dominant mechanism for SE in InGaN epilayers and InGaN/GaN multiple quantum wells was found to be the recombination of carriers localized at potential fluctuations resulting from nonuniform indium incorporation. The SE spectra from InGaN epilayers and multiple quantum wells were comprised of extremely narrow emission lines and no spectral broadening of the lines was observed as the temperature was raised from 10 K to over 550 K. Based on the presented results, we suggest a method for significantly reducing the carrier densities needed to achieve population inversion in GaN, allowing for the development of GaNactive-medium laser diodes.

scholarly journals Stimulated Emission through an Electron-Hole Plasma in Colloidal CdSe Quantum Rings

2021 ◽  
Author(s):  
Carmelita Rodà ◽  
Bastiaan B.V. Salzmann ◽  
Isabella Wagner ◽  
Yera Ussembayev ◽  
Kai Chen ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Electron Hole ◽  
Quantum Rings ◽  
Hole Plasma ◽  
Electron Hole Plasma

Stimulated Emission through an Electron–Hole Plasma in Colloidal CdSe Quantum Rings

Nano Letters ◽  
2021 ◽  
Author(s):  
Carmelita Rodà ◽  
Bastiaan B. V. Salzmann ◽  
Isabella Wagner ◽  
Yera Ussembayev ◽  
Kai Chen ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Electron Hole ◽  
Quantum Rings ◽  
Hole Plasma ◽  
Electron Hole Plasma

Electron-hole plasma generation in gallium nitride

1986 ◽  
Vol 60 (9) ◽  
pp. 705-708 ◽  
Author(s):  
R. Cingolani ◽  
M. Ferrara ◽  
M. Lugarà
Keyword(s):  
Gallium Nitride ◽  
Electron Hole ◽  
Plasma Generation ◽  
Hole Plasma ◽  
Electron Hole Plasma

Raman scattering from optically pumped electron-hole plasma in insulating GaAs

1977 ◽  
Vol 22 (2) ◽  
pp. 97-102 ◽  
Author(s):  
A.R. Vasconcellos ◽  
R.S. Turtelli ◽  
A.R.B. de Castro
Keyword(s):  
Raman Scattering ◽  
Optically Pumped ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma

Stimulated Emission from Wide-Gap Semiconductors

2011 ◽  
Vol 222 ◽  
pp. 110-113
Author(s):  
Edmundas Kuokstis
Keyword(s):  
Optical Gain ◽  
Stimulated Emission ◽  
Electron Hole ◽  
Hole Plasma ◽  
Exciton Localization ◽  
Interaction Processes ◽  
Electron Hole Plasma ◽  
Wide Gap

Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.

Stimulated emission due to spatially separated electron-hole plasma and exciton system in homoepitaxial GaN

2004 ◽  
Vol 69 (24) ◽  
Author(s):  
K. Kazlauskas ◽  
G. Tamulaitis ◽  
A. Žukauskas ◽  
T. Suski ◽  
P. Perlin ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Exciton System
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