Spin-polarized current and tunneling magnetoresistance in ferromagnetic gate bilayer graphene structures

2011 ◽  
Vol 109 (7) ◽  
pp. 073717 ◽  
Author(s):  
V. Hung Nguyen ◽  
A. Bournel ◽  
P. Dollfus
2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Walid A. Zein ◽  
Nabil A. Ibrahim ◽  
Adel H. Phillips

Using the effective-mass approximation method, and Floquet theory, we study the spin transport characteristics through a curved quantum nanowire. The spin polarization, P, and the tunneling magnetoresistance, TMR, are deduced under the effect of microwave and infrared radiations of wide range of frequencies. The results show an oscillatory behavior of both the spin polarization and the tunneling magnetoresistance. This is due to Fano-type resonance and the interplay between the strength of spin-orbit coupling and the photons in the subbands of the one-dimensional nanowire. The present results show that this investigation is very important, and the present device might be used to be a sensor for small strain in semiconductor nanostructures and photodetector.


Nature ◽  
2020 ◽  
Vol 583 (7815) ◽  
pp. 221-225 ◽  
Author(s):  
Xiaomeng Liu ◽  
Zeyu Hao ◽  
Eslam Khalaf ◽  
Jong Yeon Lee ◽  
Yuval Ronen ◽  
...  

Nanoscale ◽  
2015 ◽  
Vol 7 (6) ◽  
pp. 2391-2399 ◽  
Author(s):  
Lin Gan ◽  
Haijing Zhang ◽  
Ruizhe Wu ◽  
Qicheng Zhang ◽  
Xuewu Ou ◽  
...  

Nature ◽  
2020 ◽  
Vol 583 (7815) ◽  
pp. 215-220 ◽  
Author(s):  
Yuan Cao ◽  
Daniel Rodan-Legrain ◽  
Oriol Rubies-Bigorda ◽  
Jeong Min Park ◽  
Kenji Watanabe ◽  
...  

2019 ◽  
Vol 7 (14) ◽  
pp. 4079-4088 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Xiaocha Wang

Large tunneling magnetoresistance, perfect spin injection and fully spin-polarized photocurrent are realized in a LSMO/T4/LSMO organic magnetic tunnel junction.


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