Homogeneous dispersion of organic p-dopants in an organic semiconductor as an origin of high charge generation efficiency

2011 ◽  
Vol 98 (17) ◽  
pp. 173303 ◽  
Author(s):  
Jae-Hyun Lee ◽  
Hyun-Mi Kim ◽  
Ki-Bum Kim ◽  
Ryota Kabe ◽  
Pavel Anzenbacher ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Organic P ◽  
Generation Efficiency ◽  
Charge Generation ◽  
High Charge ◽  
Homogeneous Dispersion

Engineering dielectric constants in organic semiconductors

2017 ◽  
Vol 5 (15) ◽  
pp. 3736-3747 ◽  
Author(s):  
Ardalan Armin ◽  
Dani M. Stoltzfus ◽  
Jenny E. Donaghey ◽  
Andrew J. Clulow ◽  
Ravi Chandra Raju Nagiri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Photovoltaic Device ◽  
Dielectric Constants ◽  
Optical Frequency ◽  
Generation Efficiency ◽  
Charge Generation

An optical-frequency dielectric constant of 4.6 leads to improved charge generation efficiency in an organic semiconductor homojunction photovoltaic device.

Double-Excitation Dynamics in m-LPPP probed with sub-20 fs Time Resolution

2003 ◽  
Vol 771 ◽  
Author(s):  
C. Gadermaier ◽  
G. Cerullo ◽  
C. Manzoni ◽  
U. Scherf ◽  
E.J.W. List ◽  
...  
Keyword(s):  
Vibrational Relaxation ◽  
Broad Band ◽  
Generation Efficiency ◽  
Exciton Dissociation ◽  
Charge Generation ◽  
Carrier Generation ◽  
Dissociation Probability ◽  
Ultrafast Relaxation ◽  
First Excited State ◽  
Differential Transmission

AbstractIn a novel modification of transient differential transmission spectroscopy, the first excited state S1 is reexcited via a second laser pulse towards a higher lying state Sn. The dynamics of the relaxation of this state Sn as well as the states created from Sn are revealed by a broad-band probe pulse.We find that the charge carrier generation efficiency from Sn is higher compared to S1. The push and probe durations below 20 fs enable the temporal resolution of the ultrafast relaxation of the Sn state and enables us to identify the two main contributions to enhanced charge generation from Sn, energy migration towards sites of high dissociation probability, and exciton dissociation during vibrational relaxation.

2,6-Bis[2-(4-pentylphenyl)vinyl]anthracene:  A Stable and High Charge Mobility Organic Semiconductor with Densely Packed Crystal Structure

2006 ◽  
Vol 128 (29) ◽  
pp. 9304-9305 ◽  
Author(s):  
Hong Meng ◽  
Fangping Sun ◽  
Marc B. Goldfinger ◽  
Feng Gao ◽  
David J. Londono ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Organic Semiconductor ◽  
Charge Mobility ◽  
High Charge

The Influence of Ordering on the Photoinduced Charge Transfer in Composites of Phenyl-type Substituted Polythiophenes with Methanofullerenes

1999 ◽  
Vol 598 ◽  
Author(s):  
Christoph J. Brabec ◽  
Christoph Winder ◽  
Markus C. Scharber ◽  
N. Serdar Sariciftci ◽  
Mats R. Andersson ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transfer ◽  
Treatment Results ◽  
Generation Efficiency ◽  
Charge Generation ◽  
Photoinduced Charge Transfer ◽  
Strong Electron ◽  
Low Energies ◽  
Photoinduced Charge ◽  
Absorption Measurements

ABSTRACTRegioregular polythiophenes baring 3-(p-methoxyethoxyethoxy)-phenyl substituents (PEOPT) show high photoluminescence efficiencies. Exposing thin films of this polymer to vapors of chloroform or annealing them by heat treatment results in a red shift of the absorption maximum due to solvent or heat induced ordering which gives rise to more planar conformations. The fact, that annealed thin films of PEOPT exhibit absorption edges at relatively low energies and thus have an enhanced spectral range makes them suitable for use in photodiodes / solar cells. The photoinduced charge generation efficiency in PEOPT is significantly enhanced by the addition of a strong electron acceptor like fullerene, as observed by quenching of the luminescence and by photoinduced absorption measurements in the infrared and UV-Vis regime. The efficiency of the photoinduced charge transfer from PEOPT to a methanofullerene is found to depend on the ordering of PEOPT in thin films.

scholarly journals Photoconversion Mechanism at the pn-Homojunction Interface in Single Organic Semiconductor

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1727 ◽  
Author(s):  
Ji-Hyun Lee ◽  
Armand Perrot ◽  
Masahiro Hiramoto ◽  
Seiichiro Izawa
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Energy Structure ◽  
Free Charge ◽  
Charge Generation ◽  
Recombination Processes ◽  
Single Host ◽  
Donor Acceptor ◽  
Doping Technique ◽  
Determining Factor

Clarifying critical differences in free charge generation and recombination processes between inorganic and organic semiconductors is important for developing efficient organic photoconversion devices such as solar cells (SCs) and photodetector. In this study, we analyzed the dependence of doping concentration on the photoconversion process at the organic pn-homojunction interface in a single organic semiconductor using the temperature dependence of J–V characteristics and energy structure measurements. Even though the organic pn-homojunction SC devices were fabricated using a single host material and the doping technique resembling an inorganic pn-homojunction, the charge generation and recombination mechanisms are similar to that of conventional donor/acceptor (D/A) type organic SCs; that is, the charge separation happens from localized exciton and charge transfer (CT) state being separated by the energy offset between adjacent molecules, and the recombination happens from localized charge carrier at two adjacent molecules. The determining factor for photoconversion processes is the localized nature of charges in organic semiconductors. The results demonstrated that controlling the delocalization of the charges is important to realize efficient organic photoconversion devices.

Sign in / Sign up

Export Citation Format

Share Document