High spatial resolution spin‐polarized scanning electron microscopy (abstract)

1994 ◽  
Vol 75 (10) ◽  
pp. 6890-6890
Author(s):  
H. Matsuyama ◽  
K. Koike ◽  
F. Tomiyama ◽  
H. Aoi ◽  
Y. Shiroishi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Spin Polarized ◽  
Scanning Electron

scholarly journals Enhanced method for High Spatial Resolution surface imaging and analysis of fungal spores using Scanning Electron Microscopy

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Gopal Venkatesh Babu ◽  
Palani Perumal ◽  
Sakthivel Muthu ◽  
Sridhar Pichai ◽  
Karthik Sankar Narayan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Fungal Spores ◽  
Surface Imaging ◽  
Scanning Electron

scholarly journals Ni4Ti3 Precipitation during Ageing of MARES NiTi Shape Memory Alloys Studied by FEG-SEM

2008 ◽  
Vol 14 (S3) ◽  
pp. 13-16 ◽  
Author(s):  
F. Neves ◽  
A. Cunha ◽  
I. Martins ◽  
J.B. Correia ◽  
M. Oliveira ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
High Brightness ◽  
Very High Spatial Resolution ◽  
Brightness Field ◽  
Niti Shape Memory Alloys ◽  
Very High ◽  
Scanning Electron

The use of a high-brightness field-emission gun (FEG) in scanning electron microscopy (SEM) is a powerful technique to examine microstructures at very high spatial resolution down to nanometer level and has significantly enhanced our ability to solve challenging materials problems, allowing studies of nanoprecipitates.

Spin-polarized Scanning Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 768-769
Author(s):  
Kazuyuki Koike ◽  
Hideo Matsuyama
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Speed ◽  
Magnetic Thin Films ◽  
Electron Spin Polarization ◽  
Acquisition Time ◽  
Magnetization Direction ◽  
Spin Polarized ◽  
Conventional Methods ◽  
Scanning Electron

Spin-polarized scanning electron microscopy (spin SEM), where the secondary electron spin polarization is used as the image signal, is a novel technique for magnetic domain observation. Since its first development by Koike and Hayakawa in 1984, several laboratories have extensively studied this technique and have greatly improved its capability for data extraction and its range of applications. This paper reviews the progress over the last few years.Almost all the high expectations initially held for spin SEM have been realized. A spatial resolution of several hundreds angstroms has been attained, which is nearly one order of magnitude higher than that of conventional methods for thick samples. Quantitative analysis of magnetization direction has been performed more easily than with conventional methods. Domain observation of the surface of three-dimensional samples has been confirmed to be possible. One of the drawbacks, a long image acquisition time, has been eased by combining highspeed image-signal processing with high speed scanning, although at the cost of image quality. By using spin SEM, the magnetic structure of a 180 degrees surface Neel wall, magnetic thin films, multilayered films, magnetic discs, etc., have been investigated.

scholarly journals Low Voltage Scanning Electron Microscopy

2002 ◽  
Vol 10 (2) ◽  
pp. 22-23 ◽  
Author(s):  
David C Joy ◽  
Dale E Newbury
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Spatial Resolution ◽  
Low Voltage ◽  
Incident Beam ◽  
Operational Mode ◽  
X Ray ◽  
Rapid Fall ◽  
Voltage Scanning ◽  
Scanning Electron

Low Voltage Scanning Electron Microscopy (LVSEM), defined as operation in the energy range below 5 keV, has become perhaps the most important single operational mode of the SEM. This is because the LVSEM offers advantages in the imaging of surfaces, in the observation of poorly conducting and insulating materials, and for high spatial resolution X-ray microanalysis. These benefits all occur because a reduction in the energy Eo of the incident beam leads to a rapid fall in the range R of the electrons since R ∼k.E01.66. The reduction in the penetration of the beam has important consequences.

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