Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

JunShuai Xue; Yue Hao; JinCheng Zhang; XiaoWei Zhou; ZiYang Liu; JunCai Ma; ZhiYu Lin

doi:10.1063/1.3567529

Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.3567529 ◽

2011 ◽

Vol 98 (11) ◽

pp. 113504 ◽

Cited By ~ 28

Author(s):

JunShuai Xue ◽

Yue Hao ◽

JinCheng Zhang ◽

XiaoWei Zhou ◽

ZiYang Liu ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Lattice Matched

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Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4927743 ◽

2015 ◽

Vol 107 (4) ◽

pp. 043503 ◽

Cited By ~ 4

Author(s):

JunShuai Xue ◽

JinCheng Zhang ◽

Yue Hao

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3675453 ◽

2012 ◽

Vol 100 (1) ◽

pp. 013507 ◽

Cited By ~ 30

Author(s):

JunShuai Xue ◽

JinCheng Zhang ◽

YaoWei Hou ◽

Hao Zhou ◽

JinFeng Zhang ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Double Channel

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Thermal Resistance and Electronic Characteristics for High Electron Mobility Transistors Grown on Si and GaAs Substrates by Metal-Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.5508 ◽

1993 ◽

Vol 32 (Part 1, No. 12A) ◽

pp. 5508-5513 ◽

Cited By ~ 4

Author(s):

Takashi Aigo ◽

Hirokatsu Yashiro ◽

Mitsuhiko Goto ◽

Aiji Jono ◽

Akiyoshi Tachikawa ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gaas Substrates ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

Applied Physics Letters ◽

10.1063/1.3602919 ◽

2011 ◽

Vol 98 (25) ◽

pp. 252105 ◽

Cited By ~ 23

Author(s):

S. Lawrence Selvaraj ◽

Arata Watanabe ◽

Takashi Egawa

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Deep Pits ◽

Organic Chemical Vapor Deposition

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Mobility and charge density tuning in double δ-doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2362783 ◽

2006 ◽

Vol 24 (6) ◽

pp. 2597 ◽

Cited By ~ 6

Author(s):

Chong-Yi Lee ◽

Hung-Pin Shiao ◽

Kuan-Chu Kuo ◽

Hsin-Yen Wu ◽

Wen-Hsiang Lin

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications

Semiconductor Science and Technology ◽

10.1088/1361-6641/abbfeb ◽

2020 ◽

Vol 35 (12) ◽

pp. 124004

Author(s):

Onur S Koksaldi ◽

Brian Romanczyk ◽

Jeffrey Haller ◽

Matthew Guidry ◽

Haoran Li ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4939689 ◽

2016 ◽

Vol 108 (1) ◽

pp. 013508 ◽

Cited By ~ 6

Author(s):

JunShuai Xue ◽

JinCheng Zhang ◽

Yue Hao

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Chinese Physics Letters ◽

10.1088/0256-307x/33/10/108104 ◽

2016 ◽

Vol 33 (10) ◽

pp. 108104 ◽

Cited By ~ 2

Author(s):

Ru-Dai Quan ◽

Jin-Cheng Zhang ◽

Ya-Chao Zhang ◽

Wei-Hang Zhang ◽

Ze-Yang Ren ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

Chinese Physics Letters ◽

10.1088/0256-307x/32/11/118501 ◽

2015 ◽

Vol 32 (11) ◽

pp. 118501

Author(s):

Hong-Yu Guo ◽

Yuan-Jie Lv ◽

Guo-Dong Gu ◽

Shao-Bo Dun ◽

Yu-Long Fang ◽

...

Keyword(s):

Vapor Deposition ◽

High Frequency ◽

Ohmic Contacts ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

Journal of Central South University ◽

10.1007/s11771-012-1427-1 ◽

2012 ◽

Vol 19 (12) ◽

pp. 3444-3448

Author(s):

Cheng Gao ◽

Hai-ou Li ◽

Jiao-ying Huang ◽

Sheng-long Diao

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Organic Chemical Vapor Deposition

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