Carrier lifetime in amorphous semiconductors

1994 ◽  
Vol 75 (11) ◽  
pp. 7349-7355 ◽  
Author(s):  
D. S. Shen ◽  
J. P. Conde ◽  
V. Chu ◽  
S. Wagner
1994 ◽  
Vol 336 ◽  
Author(s):  
M. Hundhausen ◽  
U. Haken ◽  
L. Ley

ABSTRACTIn this paper we describe a new method for the determination of the carrier lifetime (r) and the carrier Mobilities (μn, μp) in semiconductors. This technique utilizes a moving intensity grating that is generated by superposition of frequency shifted laser beams for the illumination of the sample. The Material parameters are extracted from the short circuit current in the sample induced by the moving grating as a function of it's velocity (vgr). We solve the continuity equations and Poisson's equation in the small signal approach for the modulated electron and hole densities and show how these densities result in an electric field that in turn acts on the electrons and holes in order to yield a short circuit current density jsc. From a fit of this expression for jsc to experimental data we determine μn, μp and τ.


1972 ◽  
Vol 33 (C3) ◽  
pp. C3-157-C3-165 ◽  
Author(s):  
B. KRAMER ◽  
K. MASCHKE ◽  
P. THOMAS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-395-C4-398 ◽  
Author(s):  
M. Wautelet ◽  
R. Andrew ◽  
M. Failly-Lovato ◽  
L. D. Laude

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-855-C4-864 ◽  
Author(s):  
E. A. Davis

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  

Author(s):  
S. Senali Dissanayake ◽  
Naheed Ferdous ◽  
Hemi Gandhi ◽  
Eric Mazur ◽  
Elif Ertekin ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document