scholarly journals Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching

2011 ◽  
Vol 98 (10) ◽  
pp. 102113 ◽  
Author(s):  
M. Zaremba-Tymieniecki ◽  
Z. A. K. Durrani
Keyword(s):  
Schottky Barrier ◽  
Chemical Etching ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Metal Assisted Chemical Etching

Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors

2008 ◽  
Vol 93 (7) ◽  
pp. 073503 ◽  
Author(s):  
J. W. Peng ◽  
S. J. Lee ◽  
G. C. Albert Liang ◽  
N. Singh ◽  
S. Y. Zhu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Carrier Injection

scholarly journals Reusable Surface-Enhanced Raman Spectroscopy Substrates Made of Silicon Nanowire Array Coated with Silver Nanoparticles Fabricated by Metal-Assisted Chemical Etching and Photonic Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1531 ◽  
Author(s):  
Shi Bai ◽  
Yongjun Du ◽  
Chunyan Wang ◽  
Jian Wu ◽  
Koji Sugioka
Keyword(s):  
Silver Nanoparticles ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Surface Enhanced Raman Spectroscopy ◽  
Sers Substrate ◽  
Silicon Nanowire Array ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Metal Assisted Chemical Etching

Surface-enhanced Raman spectroscopy (SERS) has advanced over the last four decades and has become an attractive tool for highly sensitive analysis in fields such as medicine and environmental monitoring. Recently, there has been an urgent demand for reusable and long-lived SERS substrates as a means of reducing the costs associated with this technique To this end, we fabricated a SERS substrate comprising a silicon nanowire array coated with silver nanoparticles, using metal-assisted chemical etching followed by photonic reduction. The morphology and growth mechanism of the SERS substrate were carefully examined and the performance of the fabricated SERS substrate was tested using rhodamine 6G and dopamine hydrochloride. The data show that this new substrate provides an enhancement factor of nearly 1 × 108. This work demonstrates that a silicon nanowire array coated with silver nanoparticles is sensitive and sufficiently robust to allow repeated reuse. These results suggest that this newly developed technique could allow SERS to be used in many commercial applications.

Vertical surround-gated silicon nanowire impact ionization field-effect transistors

2007 ◽  
Vol 90 (14) ◽  
pp. 142110 ◽  
Author(s):  
M. T. Björk ◽  
O. Hayden ◽  
H. Schmid ◽  
H. Riel ◽  
W. Riess
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire

scholarly journals Nanowires: Decoupling Diameter and Pitch in Silicon Nanowire Arrays Made by Metal-Assisted Chemical Etching (Adv. Funct. Mater. 1/2014)

2014 ◽  
Vol 24 (1) ◽  
pp. 105-105 ◽  
Author(s):  
Junghoon Yeom ◽  
Daniel Ratchford ◽  
Christopher R. Field ◽  
Todd H. Brintlinger ◽  
Pehr E. Pehrsson
Keyword(s):  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Metal Assisted Chemical Etching

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

NAND And NOR Logic-In-Memory Comprising Silicon Nanowire Feedback Field-Effect Transistors

2021 ◽  
Author(s):  
Yejin Yang ◽  
Juhee Jeon ◽  
Jaemin Son ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Processing Speed ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Logic Gate ◽  
High Energy ◽  
Zero Bias ◽  
Computing Systems ◽  
Data Movement

Abstract The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindrance, logic-in-memory (LIM) has been proposed that performs both data processing and memory operations. Here, we present a NAND and NOR LIM composed of silicon nanowidre feedback field-effect transistors, whose configuration resembles that of CMOS logic gate circuits. The LIM can perform memory operations to retain its output logic under zero-bias conditions as well as logic operations with a high processing speed of nanoseconds. The newly proposed dynamic voltage-transfer characteristics verify the operating principle of the LIM. This study demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues.

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