Preparation of ferroelectric field effect transistor based on sustainable strongly correlated (Fe,Zn)3O4 oxide semiconductor and their electrical transport properties

2011 ◽  
Vol 98 (10) ◽  
pp. 102506 ◽  
Author(s):  
Junichi Takaobushi ◽  
Teruo Kanki ◽  
Tomoji Kawai ◽  
Hidekazu Tanaka
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Oxide Semiconductor ◽  
Strongly Correlated ◽  
Electrical Transport Properties ◽  
Effect Transistor

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Silicon Nanowires: Doping Dependent N- and P- Channel Fet Behavior

2004 ◽  
Vol 832 ◽  
Author(s):  
Kumhyo Byon ◽  
John E. Fischer ◽  
Kofi W. Adu ◽  
Peter. C. Eklund
Keyword(s):  
Transport Properties ◽  
Silicon Nanowires ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Pulsed Laser ◽  
Laser Vaporization ◽  
Electrical Transport Properties ◽  
Effect Transistor

ABSTRACTThe electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.

scholarly journals Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ryota Negishi ◽  
Katsuma Yamamoto ◽  
Hirofumi Tanaka ◽  
Seyed Ali Mojtahedzadeh ◽  
Nobuya Mori ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Multilayer Graphene ◽  
Electrical Transport Properties ◽  
Crossover Point ◽  
Number Of Layers ◽  
Effect Transistor

AbstractThe electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1–8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility and Ion/Ioff ratio in the FETs were improved by slightly increasing the conductance with increasing the number of layers, meaning that the excellent semiconducting characteristic. The improvement of the carrier transport properties promotes by the turbostratic stacking structure. In the turbostratic multilayer GNR with 6 layers or more, although the Ion/Ioff ratio degraded, the conductance extremely improved with increasing the number of layers. This indicates that the turbostratic multilayer GNR with thicker number of layers becomes the significantly lower resistivity wire as a metallic characteristic. We revealed that the crossover point of the physical properties between the semiconducting and metallic characteristics is determined by the strength to screen the surrounding environment effects such as charged impurity on the substrate. Our comprehensive investigation provides a design guidance for the various electrical device applications of GNR materials.

scholarly journals Electrical transport properties of black phosphorus based field-effect transistor with Au/Co/MgO tunneling contacts

2017 ◽  
Vol 122 (16) ◽  
pp. 164301 ◽  
Author(s):  
Shiheng Liang ◽  
Huaiwen Yang ◽  
Abdelhak Djeffal ◽  
Bingshan Tao ◽  
Stefan Mc-Murtry ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Black Phosphorus ◽  
Electrical Transport Properties ◽  
Effect Transistor

Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel

2021 ◽  
Author(s):  
Ryota Negishi ◽  
Katsuma Yamamoto ◽  
Hirofumi Tanaka ◽  
Seyed Ali Mojtahedzadeh ◽  
Nobuya Mori ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Multilayer Graphene ◽  
Electrical Transport Properties ◽  
Crossover Point ◽  
Number Of Layers ◽  
Effect Transistor

Abstract The electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1~8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility and Ion/Ioff ratio in the FETs were improved by slightly increasing the conductance with increasing the number of layers, meaning that the excellent semiconducting characteristic. The improvement of the carrier transport properties promotes by the turbostratic stacking structure. In the turbostratic multilayer GNR with 6 layers or more, although the Ion/Ioff ratio degraded, the conductance extremely improved with increasing the number of layers. This indicates that the turbostratic multilayer GNR with thicker number of layers becomes the significantly lower resistivity wire as a metallic characteristic. We revealed that the crossover point of the physical properties between the semiconducting and metallic characteristics is determined by the strength to screen the surrounding environment effects such as charged impurity on the substrate. Our comprehensive investigation provides a design guidance for the various electrical device applications of GNR materials.

Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor

2006 ◽  
Vol 527-529 ◽  
pp. 771-774 ◽  
Author(s):  
Han Kyu Seong ◽  
Seung Yong Lee ◽  
Heon Jin Choi ◽  
Tae Hong Kim ◽  
Nam Kyu Cho ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Native Oxide ◽  
Electrical Measurements ◽  
Electrical Transport Properties ◽  
Lithography Process ◽  
Effect Transistor

We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several μm. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm2/(Vs) for a source-drain voltage (VSD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC. The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process.

Electron Irradiation of Graphene Field Effect Transistor Devices

2013 ◽  
Vol 1549 ◽  
pp. 35-40 ◽  
Author(s):  
Sung Oh Woo ◽  
Winfried Teizer
Keyword(s):  
Electron Irradiation ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Vacuum ◽  
Ambient Conditions ◽  
Electrical Transport Properties ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Graphene Devices

ABSTRACTWe report the effects of electron irradiation on graphene Field Effect Transistor (FET) devices. We irradiated the graphene devices with 30keV electrons and measured the electrical transport properties in high vacuum in-situ. Upon electron irradiation, a Raman ‘D’ band appears. In addition, we observed that the doping behavior of the graphene devices changed from P to N type as a result of the irradiation. We also observed a shift of the Dirac point while the graphene FET device stays in vacuum and after it interacted with environmental molecules under ambient conditions.

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