Scanning tunneling microscopy investigation of graphite surface damage induced by gold‐ion bombardment

1994 ◽  
Vol 75 (3) ◽  
pp. 1390-1395 ◽  
Author(s):  
Junjue Yan ◽  
Zhigang Li ◽  
Chuanyong Bai ◽  
W. S. Yang ◽  
Yugang Wang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ion Bombardment ◽  
Surface Damage ◽  
Graphite Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Microscopy Investigation ◽  
Gold Ion

scholarly journals SCANNING TUNNELING MICROSCOPY INVESTIGATION OF GOLD-ION BOMBARDMENT DAMAGES ON GRAPHITE SURFACE

1993 ◽  
Vol 42 (6) ◽  
pp. 1027
Author(s):  
YAN JUN-JUE ◽  
BAI CHUAN-YONG ◽  
YANG WEI-SHENG ◽  
WANG YU-GANG ◽  
ZHAO WEI-JIANG ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ion Bombardment ◽  
Graphite Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Microscopy Investigation ◽  
Gold Ion

Scanning tunneling microscopy of the damage induced by ion bombardment on a graphite surface

1992 ◽  
Vol 42-44 ◽  
pp. 653-659 ◽  
Author(s):  
R. Coratger ◽  
A. Chahboun ◽  
V. Sivel ◽  
F. Ajustron ◽  
J. Beauvillain
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ion Bombardment ◽  
Graphite Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Study of Tip-Surface Interactions in Scanning Tunneling Microscopy (STM) by Reflection Electron Microscopy (REM)

1990 ◽  
Vol 48 (1) ◽  
pp. 320-321
Author(s):  
W. Lo ◽  
J.C.H. Spence ◽  
M. Kuwabara
Keyword(s):  
High Resolution ◽  
Elastic Strain ◽  
Tunneling Current ◽  
Surface Damage ◽  
Surface Interactions ◽  
Graphite Surface ◽  
Scanning Tunneling ◽  
Large Area ◽  
Tunneling Microscopy ◽  
High Resolution Tem

Work on the integration of STM with REM has demonstrated the usefulness of this combination. The STM has been designed to replace the side entry holder of a commercial Philips 400T TEM. It allows simultaneous REM imaging of the tip/sample region of the STM (see fig. 1). The REM technique offers nigh sensitivity to strain (<10−4) through diffraction contrast and high resolution (<lnm) along the unforeshortened direction. It is an ideal technique to use for studying tip/surface interactions in STM.The elastic strain associated with tunnelling was first imaged on cleaved, highly doped (S doped, 5 × 1018cm-3) InP(110). The tip and surface damage observed provided strong evidence that the strain was caused by tip/surface contact, most likely through an insulating adsorbate layer. This is consistent with the picture that tunnelling in air, liquid or ordinary vacuum (such as in a TEM) occurs through a layer of contamination. The tip, under servo control, must compress the insulating contamination layer in order to get close enough to the sample to tunnel. The contaminant thereby transmits the stress to the sample. Elastic strain while tunnelling from graphite has been detected by others, but never directly imaged before. Recent results using the STM/REM combination has yielded the first direct evidence of strain while tunnelling from graphite. Figure 2 shows a graphite surface elastically strained by the STM tip while tunnelling (It=3nA, Vtip=−20mV). Video images of other graphite surfaces show a reversible strain feature following the tip as it is scanned. The elastic strain field is sometimes seen to extend hundreds of nanometers from the tip. Also commonly observed while tunnelling from graphite is an increase in the RHEED intensity of the scanned region (see fig.3). Debris is seen on the tip and along the left edges of the brightened scan region of figure 4, suggesting that tip abrasion of the surface has occurred. High resolution TEM images of other tips show what appear to be attached graphite flakes. The removal of contamination, possibly along with the top few layers of graphite, seems a likely explanation for the observed increase in RHEED reflectivity. These results are not inconsistent with the “sliding planes” model of tunnelling on graphite“. Here, it was proposed that the force due to the tunnelling probe acts over a large area, causing shear of the graphite planes when the tip is scanned. The tunneling current is then modulated as the planes of graphite slide in and out of registry. The possiblity of true vacuum tunnelling from the cleaned graphite surface has not been ruled out. STM work function measurements are needed to test this.

scholarly journals Layer-by-Layer Pyramid Formation from Low-Energy Ar+ Bombardment and Annealing of Ge (110)

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2521
Author(s):  
Marshall van Zijll ◽  
Samantha S. Spangler ◽  
Andrew R. Kim ◽  
Hazel R. Betz ◽  
Shirley Chiang
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Surface Damage ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
Sample Holder ◽  
Tunneling Microscopy ◽  
Ion Energies ◽  
20 Nm

Isolated pyramids, 30–80 nm wide and 3–20 nm tall, form during sputter-annealing cycles on the Ge (110) surface. Pyramids have four walls with {19 13 1} faceting and a steep mound at the apex. We used scanning tunneling microscopy (STM) under ultrahigh vacuum conditions to periodically image the surface at ion energies between 100 eV and 500 eV and incremental total flux. Pyramids are seen using Ar+ between 200 eV and 400 eV, and require Ag to be present on the sample or sample holder. We suspect that the pyramids are initiated by Ag co-sputtered onto the surface. Growth of pyramids is due to the gathering of step edges with (16 × 2) reconstruction around the pyramid base during layer-by-layer removal of the substrate, and conversion to {19 13 1} faceting. The absence of pyramids using Ar+ energies above 400 eV is likely due to surface damage that is insufficiently annealed.

Scanning Tunneling Microscopy and Atomic Force Microscopy Investigation of Organic Tetracyanoquinodimethane Thin Films

1997 ◽  
Vol 12 (8) ◽  
pp. 1942-1945 ◽  
Author(s):  
H. J. Gao ◽  
H. X. Zhang ◽  
Z. Q. Xue ◽  
S. J. Pang
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Scanning Tunneling Microscopy ◽  
Pyrolytic Graphite ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Investigation

Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) investigation of tetracyanoquinodimethane (TCNQ) and the related C60-TCNQ thin films is presented. Periodic molecular chains of the TCNQ on highly oriented pyrolytic graphite (HOPG) substrates were imaged, which demonstrated that the crystalline (001) plane was parallel to the substrate. For the C60-TCNQ thin films, we found that there were grains on the film surface. STM images within the grain revealed that the well-ordered rows and terraces, and the parallel rows in different grains were generally not in the same orientation. Moreover, the grain boundary was also observed. In addition, AFM was employed to modify the organic TCNQ film surface for the application of this type of materials to information recording and storage at the nanometer scale. The nanometer holes were successfully created on the TCNQ thin film by the AFM.

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