X‐ray photoelectron spectroscopy analysis of polyimide films modified by ultraviolet pulsed laser radiation at 193 nm

1994 ◽  
Vol 75 (4) ◽  
pp. 2015-2019 ◽  
Author(s):  
A. Brezini ◽  
N. Zekri
Keyword(s):  
Laser Radiation ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Polyimide Films ◽  
Spectroscopy Analysis ◽  
Pulsed Laser Radiation ◽  
X Ray ◽  
193 Nm

scholarly journals X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films

2018 ◽  
Vol 101 (8) ◽  
pp. 3347-3356 ◽  
Author(s):  
Emeline Baudet ◽  
Christophe Cardinaud ◽  
Rémi Boidin ◽  
Aurélie Girard ◽  
Jan Gutwirth ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Spectroscopy Analysis ◽  
X Ray

Pulsed Laser Deposition of Metal Dichalcogenides on Stainless Steel

1990 ◽  
Vol 201 ◽  
Author(s):  
P. J. John ◽  
V. J. Dyhouse ◽  
N. T. McDevitt ◽  
A. Safriet ◽  
J. S. Zabinski ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Laser Raman ◽  
Crystalline Films ◽  
Metal Dichalcogenides ◽  
193 Nm

AbstractFilms of MoS2 have been successfully deposited on 440C stainless steel using an excimer laser. A comparison was made of films ablated with the laser operating at 193 nm and at 248 nm. The effects of substrate temperature were also studied. X-ray Photoelectron Spectroscopy (XPS) measurements indicated that the films were sulphur rich as compared to single crystal MoS2. Laser Raman measurements indicated that annealing was necessary to obtain crystalline films. All films exhibited coefficients of friction in the neighborhood of 0.03 in a dry nitrogen environment. Coefficients of friction in laboratory air were significantly higher.

An X-ray photoelectron spectroscopy study of poly(methyl methacrylate) surface modified by 193-nm laser radiation

1994 ◽  
Vol 33 (3) ◽  
pp. 331-338 ◽  
Author(s):  
Paul P. van Saarloos ◽  
Chris F. Vernon ◽  
Traian V. Chirila ◽  
Craig Klauber
Keyword(s):  
Laser Radiation ◽  
Methyl Methacrylate ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray ◽  
Poly Methyl Methacrylate ◽  
Surface Modified ◽  
193 Nm

Interaction between 193-nm pulsed laser radiation and α-alumina

2006 ◽  
Vol 51 (4) ◽  
pp. 514-518 ◽  
Author(s):  
V. O. Stoyanovsky ◽  
V. N. Snytnikov ◽  
N. A. Rudina ◽  
V. N. Parmon
Keyword(s):  
Laser Radiation ◽  
Pulsed Laser ◽  
Pulsed Laser Radiation ◽  
193 Nm

Analysis of 46.9-nm Pulsed Laser Radiation Aftereffects in Sc/Si Multilayer X-Ray Mirrors

2008 ◽  
pp. 563-569
Author(s):  
Yu. P. Pershyn ◽  
D. L. Voronov ◽  
E. N. Zubarev ◽  
V. A. Sevryukova ◽  
V. V.Kondratenko ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Pulsed Laser ◽  
Pulsed Laser Radiation ◽  
X Ray

Influence of Continuous and Pulsed Laser Radiation on Optical and Thermal Properties of Biological Tissues

2014 ◽  
Vol 59 (12) ◽  
pp. 1149-1154
Author(s):  
A.D. Mamuta ◽  
◽  
V.S. Voitsekhovich ◽  
N.M. Kachalova ◽  
L.F. Golovko ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Laser Radiation ◽  
Pulsed Laser ◽  
Biological Tissues ◽  
Pulsed Laser Radiation

scholarly journals Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

2011 ◽  
Vol 22 (29) ◽  
pp. 295304 ◽  
Author(s):  
A Pérez del Pino ◽  
E György ◽  
I C Marcus ◽  
J Roqueta ◽  
M I Alonso
Keyword(s):  
Quantum Dots ◽  
Laser Radiation ◽  
Pulsed Laser ◽  
Pulsed Laser Radiation ◽  
Si Substrates ◽  
Ge Quantum Dots ◽  
Self Assembled

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

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