Deep level defects and carrier removal due to proton and alpha particle irradiation of InP

1994 ◽  
Vol 75 (6) ◽  
pp. 3187-3189 ◽  
Author(s):  
George C. Rybicki ◽  
Christian A. Zorman
2013 ◽  
Vol 740-742 ◽  
pp. 661-664 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký ◽  
Maxime Berthou ◽  
Andrei Mihaila

Electronic properties of radiation damage produced in 4H-SiC epilayer by proton and alpha particle irradiation were investigated and compared. 4H-SiC epilayers, which formed the low doped n-base of Schottky barrier power diodes, were irradiated to identical depth with 550 keV protons and 1.9 MeV alphas. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurements. Results show that both projectiles produce identical, strongly localized damage peaking at ion’s projected range. Radiation defects have a negligible effect on dynamic characteristic of irradiated 4H-SiC Schottky diodes, however acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at very low irradiation fluences.


Carbon ◽  
1965 ◽  
Vol 3 (3) ◽  
pp. 382
Author(s):  
E Stach ◽  
J Depireux

1958 ◽  
Vol 112 (3) ◽  
pp. 732-739 ◽  
Author(s):  
G. W. Gobeli

1978 ◽  
Vol 69-70 ◽  
pp. 700-703 ◽  
Author(s):  
J. Roggen ◽  
J. Nihoul ◽  
J. Cornelis ◽  
L. Stals

Author(s):  
E.L. Lloyd ◽  
M.A. Gemmell ◽  
C.B. Henning ◽  
D.S. Gemmell ◽  
B.J. Zabransky

2008 ◽  
Vol 55 (4) ◽  
pp. 2229-2234 ◽  
Author(s):  
G. R. Hopkinson ◽  
A. Mohammadzadeh

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