Hole kinetics in metal‐oxide‐semiconductor oxides investigated by a hot‐carrier degradation experiment

M. Brox; W. Weber

doi:10.1063/1.356028

Hole kinetics in metal‐oxide‐semiconductor oxides investigated by a hot‐carrier degradation experiment

Journal of Applied Physics ◽

10.1063/1.356028 ◽

1994 ◽

Vol 75 (8) ◽

pp. 4046-4054 ◽

Cited By ~ 1

Author(s):

M. Brox ◽

W. Weber

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Semiconductor Oxides ◽

Hot Carrier Degradation

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Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4791676 ◽

2013 ◽

Vol 102 (7) ◽

pp. 073507 ◽

Cited By ~ 4

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hole Injection ◽

Hot Carrier ◽

High K ◽

Hot Carrier Degradation

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New Observations on Hot-Carrier Degradation in 0.1 µm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l502 ◽

2002 ◽

Vol 41 (Part 2, No. 5A) ◽

pp. L502-L504

Author(s):

Wen-Kuan Yeh ◽

Wen-Han Wang ◽

Yean-Kuen Fang ◽

Fu-Liang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Degradation

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Analysis of Hot Carrier Degradation of Lateral Double-Diffused Metal–Oxide–Semiconductor under Gate Pulse Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dp12 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DP12 ◽

Cited By ~ 3

Author(s):

Keiichi Furuya ◽

Tetsuya Nitta ◽

Toshiharu Katayama ◽

Kenichi Hatasako ◽

Takashi Kuroi ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Gate Pulse ◽

Hot Carrier Degradation

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Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor

Acta Physica Sinica ◽

10.7498/aps.57.2468 ◽

2008 ◽

Vol 57 (4) ◽

pp. 2468

Author(s):

Liu Yu-An ◽

Du Lei ◽

Bao Jun-Lin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Effect Transistor ◽

Hot Carrier Degradation

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Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 µm Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.1527 ◽

2008 ◽

Vol 47 (3) ◽

pp. 1527-1531 ◽

Cited By ~ 7

Author(s):

Shuang-Yuan Chen ◽

Chia-Hao Tu ◽

Jung-Chun Lin ◽

Mu-Chun Wang ◽

Po-Wei Kao ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Elevated Temperatures ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Degradation

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A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00210-9 ◽

2001 ◽

Vol 41 (2) ◽

pp. 169-177 ◽

Cited By ~ 4

Author(s):

M.M. De Souza ◽

J. Wang ◽

S. Manhas ◽

E.M. Sankara Narayanan ◽

A.S. Oates

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Early Stage ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Behaviour ◽

Hot Carrier ◽

Hot Carrier Degradation

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Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3144 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3144-3146 ◽

Cited By ~ 5

Author(s):

Jung-Chun Lin ◽

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Ze-Wei Jhou ◽

Hung-Chuan Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Elevated Temperatures ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Effect Transistor ◽

Hot Carrier Degradation

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Hot Carrier Degradation in Deep Sub-Micron Nitride Spacer Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5078 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5078-5082 ◽

Cited By ~ 2

Author(s):

Jun-lin Tsai ◽

Kai-ye Huang ◽

Jinn-horng Lai ◽

Jeng Gong ◽

Fu-Jei Yang ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Lightly Doped Drain ◽

Hot Carrier Degradation

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Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3523396 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AB07 ◽

Cited By ~ 4

Author(s):

E. Amat ◽

J. Martin-Martínez ◽

M. B. Gonzalez ◽

R. Rodríguez ◽

M. Nafría ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Hot Carrier ◽

Hot Carrier Degradation

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Physical Analysis for Saturation Behavior of Hot-Carrier Degradation in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.606 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 606-611 ◽

Cited By ~ 18

Author(s):

Jung-Suk Goo ◽

Hyungsoon Shin ◽

Hyunsang Hwang ◽

Dae-Gwan Kang ◽

Dong-Hyuk Ju

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Analysis ◽

Hot Carrier ◽

Lightly Doped Drain ◽

Hot Carrier Degradation

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