The channel mobility degradation in a nanoscale metal–oxide–semiconductor field effect transistor due to injection from the ballistic contacts

Munawar A. Riyadi; Vijay K. Arora

doi:10.1063/1.3554623

The channel mobility degradation in a nanoscale metal–oxide–semiconductor field effect transistor due to injection from the ballistic contacts

Journal of Applied Physics ◽

10.1063/1.3554623 ◽

2011 ◽

Vol 109 (5) ◽

pp. 056103 ◽

Cited By ~ 15

Author(s):

Munawar A. Riyadi ◽

Vijay K. Arora

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Mobility Degradation ◽

Effect Transistor

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Effects of Channel Mobility on SiC Power Metal-Oxide-Semiconductor Field Effect Transistor Performance

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.3331 ◽

1996 ◽

Vol 35 (Part 1, No. 6A) ◽

pp. 3331-3333 ◽

Cited By ~ 5

Author(s):

Sota Kobayashi ◽

Tsunenobu Kimoto ◽

Hiroyuki Matsunami

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Effect Transistor

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GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

Journal of Applied Physics ◽

10.1063/1.3140614 ◽

2009 ◽

Vol 105 (11) ◽

pp. 114510 ◽

Cited By ~ 28

Author(s):

A. Pérez-Tomás ◽

M. Placidi ◽

X. Perpiñà ◽

A. Constant ◽

P. Godignon ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Modeling ◽

Channel Mobility ◽

Inversion Channel ◽

Effect Transistor

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Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on $(11\bar{2}0)$ Face

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l1201 ◽

2001 ◽

Vol 40 (Part 2, No. 11B) ◽

pp. L1201-L1203 ◽

Cited By ~ 9

Author(s):

Junji Senzaki ◽

Kazutoshi Kojima ◽

Shinsuke Harada ◽

Ryoji Kosugi ◽

Seiji Suzuki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Inversion Channel ◽

Effect Transistor

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Improvement of Channel Mobility for Trench Metal-Oxide-Semiconductor Field Effect Transistor by Smoothing Trench Sidewall Surface

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.116 ◽

2001 ◽

Vol 40 (Part 1, No. 1) ◽

pp. 116-117

Author(s):

Akihiro Yahata ◽

Satoshi Urano ◽

Tomoki Inoue ◽

Takashi Shinohe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Effect Transistor ◽

Sidewall Surface

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Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1428085 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1568-1571 ◽

Cited By ~ 51

Author(s):

Shinsuke Harada ◽

Ryoji Kosugi ◽

Junji Senzaki ◽

Won-Ju Cho ◽

Kenji Fukuda ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Effect Transistor

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Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7784 ◽

2008 ◽

Vol 47 (10) ◽

pp. 7784-7787 ◽

Cited By ~ 14

Author(s):

Kazuki Yamaji ◽

Masato Noborio ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Annealing ◽

Channel Mobility ◽

Effect Transistor

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO2-InP

IEEE Photonics Technology Letters ◽

10.1109/68.605530 ◽

1997 ◽

Vol 9 (8) ◽

pp. 1143-1145 ◽

Cited By ~ 10

Author(s):

T. Yamagata ◽

K. Shimomura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Responsivity ◽

Effect Transistor

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