High‐frequency capacitive effects in resonant tunneling diodes

1993 ◽  
Vol 74 (4) ◽  
pp. 2908-2913
Author(s):  
X. J. Lu ◽  
D. Rhodes ◽  
B. S. Perlman
Keyword(s):  
High Frequency ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

scholarly journals Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

2015 ◽  
Vol 107 (10) ◽  
pp. 103105 ◽  
Author(s):  
J. Gaskell ◽  
L. Eaves ◽  
K. S. Novoselov ◽  
A. Mishchenko ◽  
A. K. Geim ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Frequency ◽  
Resonant Tunneling ◽  
Hexagonal Boron Nitride ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

High-frequency capacitance of bipolar resonant tunneling diodes

1996 ◽  
Vol 79 (2) ◽  
pp. 905 ◽  
Author(s):  
K. Fobelets ◽  
C. Van Hoof ◽  
J. Genoe ◽  
J. Stake ◽  
L. Lundgren ◽  
...  
Keyword(s):  
High Frequency ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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