Band‐edge optical absorption spectra of GaAs quantum wires calculated by multiband effective mass theory

1993 ◽  
Vol 74 (10) ◽  
pp. 6383-6390 ◽  
Author(s):  
Hiroaki Ando ◽  
Shunji Nojima ◽  
Hiroshi Kanbe
Keyword(s):  
Optical Absorption ◽  
Effective Mass ◽  
Absorption Spectra ◽  
Quantum Wires ◽  
Band Edge ◽  
Optical Absorption Spectra

Optical absorption spectra near the fundamental band edge in Cu2In4Se7 bulk crystals

2003 ◽  
Vol 93 (11) ◽  
pp. 8939-8944 ◽  
Author(s):  
C. Rincón ◽  
S. M. Wasim ◽  
G. Marı́n ◽  
G. Sánchez Pérez
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Band Edge ◽  
Optical Absorption Spectra ◽  
Bulk Crystals ◽  
Fundamental Band

Optical Absorption of Doped and Undoped Bulk SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
K. Miller ◽  
Q. Zhou ◽  
J. Chen ◽  
M. O. Manasreh ◽  
Z. C. Feng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Spectral Region ◽  
Sharp Peak ◽  
Band Edge ◽  
Optical Absorption Spectra ◽  
Bulk Silicon ◽  
Free Carriers

ABSTRACTOptical absorption spectra of undoped, n-type, and semi-insulating 6H and 4H bulk silicon carbide (SiC) were obtained in the spectral region of 200 – 3200 nm (6.20 – 0.3875 eV). Several features were observed in the absorption spectra collected for various samples. A sharp peak below the band gap was observed in 4H SiC. The intensity of this peak was observed to increase in samples that exhibit larger absorption due to free carriers, which leads us to conclude that the defect responsible for this peak is also the source of the free carriers in the materials. Additionally, a series of optical absorption peaks separated by approximately 21 meV were observed around 0.9185 eV (1350 nm). These peaks are zero phonon lines of intraband transitions in the VSi 3d shell. The optical absorption near the band edge was observed to be sample dependent. The variation of the band gap as a function of temperature is also observed to be sample dependent.

Optical Absorption Spectra of Band-Edge Modulated a-Si1-xNx:H Films

1989 ◽  
Vol 28 (Part 2, No. 5) ◽  
pp. L741-L743 ◽  
Author(s):  
Chisato Ogihara ◽  
Hiroshi Ohta ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Band Edge ◽  
Optical Absorption Spectra
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