Field‐effect conductance in amorphous silicon thin‐film transistors with a defect pool density of states

1993 ◽  
Vol 74 (11) ◽  
pp. 6655-6666 ◽  
Author(s):  
S. C. Deane ◽  
M. J. Powell
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Silicon Thin Film

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Thermal-CVD Produced Amorphous-Silicon Thin-Film Transistors-Ambipolar Characteristics

1990 ◽  
Vol 192 ◽  
Author(s):  
Hiroshi Kanoh ◽  
Osamu Sugiura ◽  
Paul A. Breddels ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Hole Mobility ◽  
Silicon Thin Film ◽  
Free Hole ◽  
Thermal Cvd ◽  
Channel Mode

ABSTRACTAmorphous-silicon thin-film transistors (a-Si TFTs) have been fabricated by using an a-Si layer deposited by low-temperature thermal-CVD method using higher silanes. The TFT with thermally grown SiO2 gate was operated in both the n-channel mode and the p-channel mode. The maximum field-effect mobility and typical on/off current ratio were 1.5 cm2/Vs and 107 for the n-channel operation, and 0.2 cm2/Vs and 106 for the p-channel operation, respectively. Free electron mobility in the conduction band and free hole mobility in the valence band have been estimated, using the temperature dependence of the field-effect mobilities. It was found that the hole mobility is as high as the electron mobility.

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