A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions
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2018 ◽
Vol 114
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pp. 62-74
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2013 ◽
Vol 52
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pp. 044303
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Vol 56
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pp. 054201
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Vol 47
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pp. 8743-8748
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Vol 43
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pp. 7993-7996
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Vol 53
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pp. 2364-2369
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