Photoabsorption and photoelectric process in Si nanocrystallites

2011 ◽  
Vol 98 (4) ◽  
pp. 043106 ◽  
Author(s):  
Anchala ◽  
S. P. Purohit ◽  
K. C. Mathur
Keyword(s):  
Si Nanocrystallites

scholarly journals Local-fields and disorder effects in free-standing and embedded Si nanocrystallites

2010 ◽  
Vol 247 (8) ◽  
pp. 2113-2117 ◽  
Author(s):  
Roberto Guerra ◽  
Elena Degoli ◽  
Margherita Marsili ◽  
Olivia Pulci ◽  
Stefano Ossicini
Keyword(s):  
Local Fields ◽  
Free Standing ◽  
Disorder Effects ◽  
Si Nanocrystallites

The Effect of DC Bias Voltage on the Structural and Optical Properties of Hydrogenated Nanocrystalline Si Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 1261-1264 ◽  
Author(s):  
Jae Hyun Shim ◽  
Nam Hee Cho
Keyword(s):  
Vapor Deposition ◽  
Amorphous Matrix ◽  
Chemical Vapor ◽  
Rf Power ◽  
Structural And Optical Properties ◽  
Dc Bias ◽  
Pl Emission ◽  
Si Films ◽  
Si Nanocrystallites ◽  
Nanocrystalline Si

Amorphous and nanocrystalline Si films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited with a RF power of 100 W, while substrates were under DC biases varying from 0 to -600 V. The size as well as the concentration of Si nanocrystallites increased with raising the DC bias; the PL emission wavelength was shifted from 400 to 750 nm. A model for the nanostructural variation in the nc-Si:H films was suggested to describe the change in the size and concentration of the nanocrystallites as well as the amorphous matrix depending on the DC bias conditions.

Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiOx films

1998 ◽  
Vol 83 (4) ◽  
pp. 2228-2234 ◽  
Author(s):  
T. Inokuma ◽  
Y. Wakayama ◽  
T. Muramoto ◽  
R. Aoki ◽  
Y. Kurata ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Si Nanocrystallites

Hydrogenation effect on enhancement of photoluminescence of Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation

2006 ◽  
Vol 84 (4) ◽  
pp. 395-401 ◽  
Author(s):  
N. Fukata ◽  
C. Li ◽  
H. Morihiro ◽  
K. Murakami ◽  
M. Mitome ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Er Doped ◽  
Hydrogenation Effect ◽  
Si Nanocrystallites

Si nanocrystallites embedded in hard TiFeSi2 matrix as an anode material for Li-ion batteries

2012 ◽  
Vol 687 ◽  
pp. 84-88 ◽  
Author(s):  
Minsoo Kim ◽  
Jae-Woong Kim ◽  
Min-Seok Sung ◽  
Yoon Hwa ◽  
Seong Hoon Kim ◽  
...  
Keyword(s):  
Anode Material ◽  
Li Ion Batteries ◽  
Li Ion ◽  
Si Nanocrystallites

Hydrogen Passivation of Er and Si Nanocrystallites in Er-doped SiO2 - Increase in Photoluminescence-

2004 ◽  
Vol 832 ◽  
Author(s):  
N. Fukata ◽  
C. Li ◽  
H. Uematsu ◽  
T. Arai ◽  
T. Makimura ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Signal Intensity ◽  
Hydrogen Gas ◽  
Hydrogen Passivation ◽  
Si Substrate ◽  
Gas Atmosphere ◽  
Oxygen Gas ◽  
Pl Intensity ◽  
Er Doped ◽  
Si Nanocrystallites

ABSTRACTHydrogen passivation effect on the enhancement of photoluminescence (PL) of Er ions in SiO2 films contained Si nanocrystallites (nc-Si) has been investigated. Er-doped SiO2 films were fabricated by laser ablation of Er-deposited Si substrate in oxygen gas atmosphere. The PL intensity of Er ions and nc-Si were increased by hydrogen gas treatments, while ESR signal intensity of residual defects located at the interfaces between nc-Si and SiO2 was decreased. These results indicate that hydrogen passivation of residual defects is useful for the enhancement of the Er PL.

Annealing effect on the photoluminescence of Si nanocrystallites thin films

2003 ◽  
Vol 23 (6-8) ◽  
pp. 1017-1019 ◽  
Author(s):  
Kyung Ah Jeon ◽  
Jong Hoon Kim ◽  
Jin Baek Choi ◽  
Kyoung Bo Han ◽  
Sang Yeol Lee
Keyword(s):  
Thin Films ◽  
Annealing Effect ◽  
Si Nanocrystallites
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