Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment

2011 ◽  
Vol 98 (4) ◽  
pp. 041902 ◽  
Author(s):  
Z. W. Zuo ◽  
W. T. Guan ◽  
Y. Wang ◽  
J. Lu ◽  
J. Z. Wang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Amorphous Silicon ◽  
Hydrogen Plasma ◽  
Silicon Films ◽  
Microcrystalline Silicon

DEVELOPMENT OF HIGHLY CONDUCTIVE P-TYPE MICROCRYSTALLINE SILICON FILMS FOR N–I–P FLEXIBLE SOLAR CELLS APPLICATION

2010 ◽  
Vol 24 (28) ◽  
pp. 5527-5538 ◽  
Author(s):  
Q. S. LEI ◽  
H. X. XU ◽  
J. P. XU
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
Amorphous Silicon ◽  
Treatment Time ◽  
Hydrogen Plasma ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Nucleation Layer ◽  
P Type

In this paper, we reported highly conductive p-type microcrystalline silicon (μc- Si:H ) films deposited on amorphous silicon (a- Si:H ) surface by very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) technique. Hydrogen plasma treatment of amorphous silicon surface and nucleation layers were introduced prior to μc- Si:H films deposition. The film properties were investigated by using Raman spectra, scanning electron microscope (SEM), optical transmission and reflection, as well as dark conductivity measurements. The influence of plasma treatment and nucleation layer on the growth and properties of the thin p-type μc- Si:H films was studied. It is demonstrated that the hydrogen plasma treatment of a- Si:H films gives rise to the deposition of μc- Si:H on the a- Si:H surface. Also, the growth and properties of the μc- Si:H films are strongly dependent on the nucleation layer. The dark conductivity (σd) and crystalline fraction increase with the plasma treatment time and attain high values at about 600 s. A p-type μc- Si:H film with conductivity of 0.0875 Scm-1 at a thickness of 30 nm was obtained. The film was introduced as window layers for flexible solar cells. An efficiency of about 7.15% was obtained.

Reduced defect density in microcrystalline silicon by hydrogen plasma treatment

2013 ◽  
Vol 34 (10) ◽  
pp. 103006
Author(s):  
Jingyan Li ◽  
Xiangbo Zeng ◽  
Hao Li ◽  
Xiaobing Xie ◽  
Ping Yang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Microcrystalline Silicon

Mechanism of the Improvement in Microcrystalline Silicon Solar Cells by Hydrogen Plasma Treatment

2013 ◽  
Vol 773 ◽  
pp. 118-123
Author(s):  
Jing Yan Li ◽  
Xiang Bo Zeng ◽  
Hao Li ◽  
Xiao Bing Xie ◽  
Ping Yang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Plasma Treatment ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Microcrystalline Silicon ◽  
One Dimensional ◽  
Long Wavelength ◽  
Drift Length ◽  
Experimental Improvement

We explain the experimental improvement in long wavelength response by hydrogen plasma treatment (HPT) in n/i interface. The absorption coefficient of the intrinsic microcrystalline silicon (μc-Si) is decreased in the low energy region (0.8~1.0 eV) by HPT, which indicates a lower defect density in μc-Si layer deposited with HPT than its counterpart without HPT. Simulation by one-dimensional device simulation program for the Analysis of Microelectronic and Photonic Structures (AMPS-1D) shows a higher long wavelength response in μc-Si solar cell if the defect density in intrinsic μc-Si layer is smaller. Our simulation results also disclose that the less defect density in intrinsic layer, the lower recombination rate and the higher electric field is. Higher electric field results in longer drift length which will promote collection of carriers generated by photons with long wavelength. Thus we deduce that HPT decreased defect density in absorber layer and improved the performance of μc-Si solar cells in long wavelength response.

scholarly journals A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

10.30544/128 ◽  
2015 ◽  
Vol 21 (1) ◽  
pp. 7-14
Author(s):  
Meysam Zarchi ◽  
Shahrokh Ahangarani
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Intrinsic Stress ◽  
Hot Wire ◽  
Microcrystalline Silicon

The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature.

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