X-ray photoelectron spectroscopy analysis of organic materials irradiated with gas cluster ion beam

Author(s):  
Motohiro Nakagiri ◽  
Noriaki Toyoda ◽  
Isao Yamada ◽  
Jiro Matsuo ◽  
Masataka Kase ◽  
...  
2008 ◽  
Vol 47 (5) ◽  
pp. 3380-3383 ◽  
Author(s):  
Yuichi Haruyama ◽  
Teruyuki Kitagawa ◽  
Kazuhiro Kanda ◽  
Shinji Matsui ◽  
Tatsuo Gejo ◽  
...  

2011 ◽  
Vol 1288 ◽  
Author(s):  
Motohiro Nakagiri ◽  
Noriaki Toyoda ◽  
Isao Yamada

ABSTRACTOrganic materials have been widely used in various fields of electronic applications. However, they are difficult to process without damage by using a conventional ion beam which use energetic ions. In this study, gas cluster ion beam (GCIB), which shows low-damage process, was used for organic materials, and irradiation effect of size selected GCIB was studied with Xray photoelectron spectroscopy (XPS). In the case of irradiation of 500 eV Ar ion (monomer ion) on polyimide, the intensities of both N-C=O and C-O bond decreased after irradiation. On the other hand, there was small change in the XPS spectra after 15 keV Ar-GCIB irradiation with the same ion dose. The etching rate of polyimide per one ion with 15 keV Ar-GCIB was almost 1.8×104 times higher than that with 500 eV Ar monomer ions. The damages in polyimide decreased with increasing the Ar cluster size owing to the reduction of energy per atom at acceleration voltage of 15 kV. After irradiation of size selected 5 kV Ar cluster ion, damage was almost negligible. Although, the surface became rough after irradiation of Ar-GCIB, surface roughness and the change of chemical bond were very small with N2-GCIB irradiation. Ar-GCIB irradiation on dye-sensitized solar cells (N719) showed that very low-damage process is possible with GCIB, and it indicated that GCIB is suitable for surface processing of organic materials used in electronic devices.


2014 ◽  
Vol 53 (3S2) ◽  
pp. 03DD05 ◽  
Author(s):  
Ryo Hinoura ◽  
Akira Yamaguchi ◽  
Noriaki Toyoda ◽  
Ken-ichi Hara ◽  
Isao Yamada

Author(s):  
Andrzej Bernasik ◽  
Jakub Haberko ◽  
Mateusz M. Marzec ◽  
Jakub Rysz ◽  
Wojciech Łużny ◽  
...  

2001 ◽  
Vol 695 ◽  
Author(s):  
Kazuhiro Kanda ◽  
Yutaka Shimizugawa ◽  
Yuichi Haruyama ◽  
Isao Yamada ◽  
Shinji Matsui ◽  
...  

ABSTRACTThe coordination of the carbon atoms in the diamond-like carbon (DLC) films formed by Ar gas cluster ion beam (GCIB) assisted deposition of fullerene was investigated using synchrotron radiation. Near-edge x-ray absorption fine structure (NEXAFS) spectra of the carbon K-edge of the DLC films formed by various methods were measured over the excitation energy range 275-320 eV, using synchrotron radiation. On the basis of the analysis of the peak corresponding the transition of the excitation electron from carbon 1s orbital to Φ orbital, relative sp2 contents of various DLC films were determined. The DLC films formed by Ar GCIB assisted fullerene deposition were found to consist of a high sp3 hybridized carbon.


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