Effects of interdiffusion on the sub‐band‐edge structure of In0.53Ga0.47As/InP single quantum wells

1993 ◽  
Vol 73 (11) ◽  
pp. 7524-7532 ◽  
Author(s):  
Joseph Micallef ◽  
E. Herbert Li ◽  
Bernard L. Weiss
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Single Quantum ◽  
Edge Structure

Photoluminescence Investigations of High Purity Mbe-Grown Sil−xGex/Si Single Quantum Wells

1993 ◽  
Vol 298 ◽  
Author(s):  
M. Wachter ◽  
F. Schdffler ◽  
K. Thonke ◽  
R. Sauer ◽  
H.-J. Herzog ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Energy ◽  
Free Exciton ◽  
Sige Layer ◽  
Band Edge ◽  
Background Concentration ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Cap Layer ◽  
Shallow Impurities

AbstractSil-xGex/Si(100) single quantum well samples were grown by MBE with x varying from 18.5% to 36%, well widths Lz from 1.1 nm to 175 nm, and growth temperatures To in the range from 350°C to 750°C. We studied the photoluminescence (PL) properties in detail using Fourier transform spectroscopy. In most of the samples, the dominant and phononresolved SiGe band edge PL exhibits exclusively free exciton luminescence even at sample temperatures as low as 2 K. From the absence of bound excitons we conclude that the background concentration of shallow impurities is low in our SiGe layers. Variation of the growth temperature of the Si cap layer strongly influences the efficiency of the SiGe band edge PL at higher temperatures, whereas the PL efficiency is less affected at T=4 K. This indicates a reduction of the concentration of non-radiative defects in the cap layer when it is grown at higher temperatures. A broad PL band 150 meV below the SiGe bandgap, supposed to be typical for MBE-grown material, is weakly observed in only a few samples. The strength of the broad PL band does not unambiguously depend on the strain energy density in the SiGe layer as recently suggested.

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

Magneto-optics of dense electron plasmas in modulation-doped GaInAs/AlInAs single quantum wells

1994 ◽  
Vol 37 (4-6) ◽  
pp. 919-922
Author(s):  
Y.-H. Zhang ◽  
J.L. Merz ◽  
M. Potemski ◽  
J.C. Maan ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Electron Plasmas
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