Magnetic anisotropy and transport properties of 70 nm SrRuO3 films grown on different substrates

2011 ◽  
Vol 109 (7) ◽  
pp. 07D707 ◽  
Author(s):  
X. W. Wang ◽  
Y. Q. Zhang ◽  
H. Meng ◽  
Z. J. Wang ◽  
D. Li ◽  
...  
2004 ◽  
Vol 95 (11) ◽  
pp. 7288-7290 ◽  
Author(s):  
J. H. Song ◽  
Y. Cui ◽  
J. J. Lee ◽  
Yunki Kim ◽  
J. B. Ketterson ◽  
...  

1994 ◽  
Vol 213-214 ◽  
pp. 243-247 ◽  
Author(s):  
L. Havela ◽  
V. Sechovský ◽  
H. Nakotte ◽  
E. Brück ◽  
F.R. de Boer

2000 ◽  
Vol 62 (17) ◽  
pp. 11344-11346 ◽  
Author(s):  
M. Hehn ◽  
O. Lenoble ◽  
D. Lacour ◽  
A. Schuhl

2015 ◽  
Vol 233-234 ◽  
pp. 411-414
Author(s):  
Nobuki Tezuka ◽  
Tatsuya Saito ◽  
Masashi Matsuura ◽  
Satoshi Sugimoto

The authors have been investigated structural, magnetic and electrical transport properties for CFAS/n-GaAs junctions. From cross sectional TEM image, RHEED and XRD patternz of thin CFAS films, CFAS films found to be grown epitaxially on GaAs, and shown L21-ordered structure for the films with substrate temperature (TCFAS) of 300°C and 400°C. It is hard to find some additional phase around the interface between CFAS and GaAs. Magnetic moment (and magnetic anisotropy energy) of CFAS increased (and decreased) with increasingTCFASup to 300°C and decreased (and increased) atTCFASof 400°C, respectively. The asymmetry of current (J)-voltage (V) curve for the junction withTCFAS=300°C was found to be larger than those for other junctions. It was found there is the relation betweenTCFASdependence of spin signal obtained by three terminal Hanle or four terminal non-local measurement and that of magnetic moment, magnetic anisotropy field or asymmetry ofJ-Vcurve.


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