Development of current perpendicular to plane differential dual spin valve for ultrahigh resolution

2011 ◽  
Vol 109 (7) ◽  
pp. 07B707 ◽  
Author(s):  
G. C. Han ◽  
C. C. Wang ◽  
J. J. Qiu ◽  
P. Luo ◽  
V. Ko ◽  
...  
Keyword(s):  
Spin Valve ◽  
Ultrahigh Resolution ◽  
Current Perpendicular To Plane

Low resistance spin-valve-type current-perpendicular-to-plane giant magnetoresistance with Co75Fe25

2005 ◽  
Vol 97 (10) ◽  
pp. 10C507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Kiyoshi Kuga
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Low Resistance ◽  
Current Perpendicular To Plane

Narrow Track Current-Perpendicular-To-Plane Spin Valve GMR Heads

2004 ◽  
Vol 40 (1) ◽  
pp. 207-212 ◽  
Author(s):  
M. Saito ◽  
N. Hasegawa ◽  
Y. Ide ◽  
Y. Nishiyama ◽  
Y. Hayakawa ◽  
...  
Keyword(s):  
Spin Valve ◽  
Current Perpendicular To Plane

Spin-valve heads in the current-perpendicular-to-plane mode for ultrahigh-density. recording

2002 ◽  
Vol 38 (1) ◽  
pp. 84-88 ◽  
Author(s):  
A. Tanaka ◽  
Y. Shimizu ◽  
Y. Seyama ◽  
K. Nagasaka ◽  
R. Kondo ◽  
...  
Keyword(s):  
Spin Valve ◽  
Current Perpendicular To Plane ◽  
Ultrahigh Density ◽  
Plane Mode

Spin transfer switching in current-perpendicular-to-plane spin valve observed by magneto-optical Kerr effect using visible light

2007 ◽  
Vol 91 (5) ◽  
pp. 052507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Norikazu Kawamura ◽  
...  
Keyword(s):  
Visible Light ◽  
Kerr Effect ◽  
Spin Valve ◽  
Spin Transfer ◽  
Optical Kerr Effect ◽  
Magneto Optical Kerr Effect ◽  
Current Perpendicular To Plane

The magnetoresistance origin of FeCo nanocontacts with current-perpendicular-to-plane spin-valve structure (invited)

2009 ◽  
Vol 105 (7) ◽  
pp. 07B725 ◽  
Author(s):  
M. Takagishi ◽  
H. N. Fuke ◽  
S. Hashimoto ◽  
H. Iwasaki ◽  
S. Kawasaki ◽  
...  
Keyword(s):  
Spin Valve ◽  
Valve Structure ◽  
Current Perpendicular To Plane

Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry

2002 ◽  
Vol 92 (5) ◽  
pp. 2646-2650 ◽  
Author(s):  
H. Yuasa ◽  
M. Yoshikawa ◽  
Y. Kamiguchi ◽  
K. Koi ◽  
H. Iwasaki ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Plane Geometry ◽  
Current Perpendicular To Plane

Enhancement of current-perpendicular-to-plane giant magnetoresistance by insertion of amorphous ferromagnetic underlayer in Heusler alloy-based spin-valve structures

2016 ◽  
Vol 10 (1) ◽  
pp. 013006 ◽  
Author(s):  
Young-suk Choi ◽  
Tomoya Nakatani ◽  
John C. Read ◽  
Matthew J. Carey ◽  
Derek A. Stewart ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Current Perpendicular To Plane

scholarly journals Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti2NiAl

2019 ◽  
Vol 10 ◽  
pp. 1658-1665
Author(s):  
Yu Feng ◽  
Zhou Cui ◽  
Bo Wu ◽  
Jianwei Li ◽  
Hongkuan Yuan ◽  
...  
Keyword(s):  
Transmission Coefficient ◽  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Magnetic Moments ◽  
Heusler Alloys ◽  
Spin Valve ◽  
Total Transmission ◽  
Higher Spin ◽  
Magnetoresistance Ratio ◽  
Current Perpendicular To Plane

A Ti2NiAl inverse Heusler alloy based current-perpendicular-to-plane (CPP) spin valve (SV) with various kinds of atomic terminated interfaces has been designed to explore the potential application of Heusler alloys in spintronics devices. By performing first principles calculations combined with the nonequilibrium Green’s function, it is revealed that spin magnetic moments of interfacial atoms suffer a decrease, and the electronic structure shows that the TiNiB-terminated structure possesses the largest interface spin polarization of ≈55%. Our study on spin-transport properties indicates that the total transmission coefficient at the Fermi level mainly comes from the contribution from the spin up electrons, which are regarded as the majority of the spin electrons. When the two electrodes of the CPP-SV device are in parallel magnetization configuration, the interface containing Ti and Ni atoms possesses a higher spin up transmission coefficient than the interface containing Ti and Al atoms. The device with the TiNiB-terminated interface possesses the largest magnetoresistance ratio of 3.28 × 105, and it has great application potential in spintronics devices.

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