Refinement on the theories of measurement for trap density from space‐charge‐limited current

1993 ◽  
Vol 73 (1) ◽  
pp. 261-264 ◽  
Author(s):  
Lianggang Lu
Keyword(s):  
Space Charge ◽  
Trap Density ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Space-charge-limited current flow and trap density in undoped diamond films

1993 ◽  
Vol 2 (5-7) ◽  
pp. 825-828 ◽  
Author(s):  
M. Werner ◽  
O. Dorsch ◽  
A. Hinze ◽  
E. Obermeier ◽  
R.E. Harper ◽  
...  
Keyword(s):  
Space Charge ◽  
Current Flow ◽  
Diamond Films ◽  
Trap Density ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Space-charge-limited current theory for a spatially non-uniform trap distribution

1978 ◽  
Vol 31 (10) ◽  
pp. 2117 ◽  
Author(s):  
JS Bonham
Keyword(s):  
Space Charge ◽  
Low Voltage ◽  
Step Function ◽  
Open Circuit ◽  
Trap Density ◽  
Asymmetric Distribution ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Space Charge Limited

The theory of space-charge-limited current, including diffusion, is discussed for an insulator containing a shallow or exponential distribution of traps whose concentration varies with position, being higher near the insulator surface than in the bulk. Two simple step- function spatial distributions are considered-one symmetric and one asymmetric. Analytic treatments are given for the open-circuit situation in both cases. For the symmetric case simple formulae are derived for the current-voltage relation. The current may be bulk- or surface-limited or there may be a transition from the former to the latter as the voltage is raised, giving rise to considerable structure in the current-voltage curves not predicted by theory which neglects diffusion. An asymmetric distribution may give rise to rectification at low voltages. This can be treated by considering the region of high trap density near one electrode to make an effectively blocking contact to the bulk of the insulator. Comparison of open-circuit potential profiles for the step-function and exponential spatial trap distributions suggests that the system is insensitive at low voltage to the nature of the spatial distribution; only the trap density in the vicinity of the surfaces is important.

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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